SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles

2015 ◽  
Vol 62 (2) ◽  
pp. 278-285 ◽  
Author(s):  
Kimimori Hamada ◽  
Masaru Nagao ◽  
Masaki Ajioka ◽  
Fumiaki Kawai
Keyword(s):  
Environmentally Friendly ◽  
Power Device ◽  
Next Generation ◽  
Device Technology

scholarly journals Recent Progress with Next Generation High-Speed Ethernet Optical Device Technology

2019 ◽  
Vol E102.C (4) ◽  
pp. 324-332
Author(s):  
Hiroshi ARUGA ◽  
Keita MOCHIZUKI ◽  
Tadashi MURAO ◽  
Mizuki SHIRAO
Keyword(s):  
High Speed ◽  
Recent Progress ◽  
Next Generation ◽  
Optical Device ◽  
Device Technology

scholarly journals A Review on Development Prospect of CZTS Based Thin Film Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-11 ◽  
Author(s):  
Xiangbo Song ◽  
Xu Ji ◽  
Ming Li ◽  
Weidong Lin ◽  
Xi Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Manufacturing Process ◽  
Environmentally Friendly ◽  
Development Prospect ◽  
Thin Film Solar Cells ◽  
Next Generation ◽  
Manufacturing Equipment ◽  
Manufacturing Technologies ◽  
The Ideal

Cu2ZnSnS4is considered as the ideal absorption layer material in next generation thin film solar cells due to the abundant component elements in the crust being nontoxic and environmentally friendly. This paper summerized the development situation of Cu2ZnSnS4thin film solar cells and the manufacturing technologies, as well as problems in the manufacturing process. The difficulties for the raw material’s preparation, the manufacturing process, and the manufacturing equipment were illustrated and discussed. At last, the development prospect of Cu2ZnSnS4thin film solar cells was commented.

SiC High Temperature Electronics for Next Generation Aircraft Controls Systems

1996 ◽  
Author(s):  
John F. Perkins ◽  
Richard H. Hopkins ◽  
Charles D. Brandt ◽  
Anant K. Agarwal ◽  
Suresh Seshadri ◽  
...  
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Technology Development ◽  
Temperature Tolerance ◽  
Oxide Semiconductor ◽  
Power Device ◽  
Next Generation ◽  
Power Devices ◽  
Basic Work ◽  
Aircraft Controls

Several organizations, including Westinghouse, CREE, and ATM, as well as researchers in Japan and Europe, are working to develop SiC power devices for reliable, high power and high temperature environments in military, industrial, utility, and automotive applications. Other organizations, such as NASA Lewis and several universities, are also doing important basic work on basic SiC technology development. It has been recognized for two decades that the superior properties of SiC lead to range of devices with higher power, greater temperature tolerance, and significantly more radiation hardness than silicon or GaAs. This combination of superior thermal and electrical properties results in SiC devices that can operate at up to ten times the power density of Si devices for a given volume. Recent research has focused on the development of vertical metal oxide semiconductor field effect transistor (VMOSFET) power device technology, and complementary high speed, temperature-tolerant rectifier-diodes for power applications. We are also evaluating applications for field control thyristors (FCT) and MOS turn-off thyristors (MTO). The technical issues to be resolved for these devices are also common to other power device structures. The present paper reviews the relative benefits of various power devices structures, with emphasis on how the special properties of SiC enhance the desirability of specific device configurations as compared to the Si-based versions of these devices. Progress in SiC material quality and recent power device research will be reviewed, and the potential for SiC-based devices to operate at much higher temperatures than Si-based devices, or with enhanced reliability at higher temperatures will be stressed. We have already demonstrated 1000V breakdown, current densities of 1 kA/cm2, and measurements up to 400°C in small diodes. The extension of this work will enable the implementation of highly distributed aircraft power control systems, as well as actuator and signal conditioning electronics for next generation engine sensors, by permitting electronic circuits, sensors and smart actuators to be mounted on or at the engine.

Potential and Challenges of Diamond Wafer Toward Power Electronics

2018 ◽  
Vol 12 (2) ◽  
pp. 175-178
Author(s):  
Shinichi Shikata ◽  
Keyword(s):  
Energy Saving ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Power Device ◽  
Surface Finishing ◽  
Low Resistivity ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Century Development ◽  
Device Technology

To achieve a 50% worldwide reduction of CO2by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.

Low power device technology with SiGe channel, HfSiON, and Poly-Si gate

2005 ◽  
Author(s):  
H.C.-H. Wang ◽  
Shang-Jr Chen ◽  
Ming-Fang Wang ◽  
Pang-Yen Tsai ◽  
Ching-Wei Tsai ◽  
...  
Keyword(s):  
Low Power ◽  
Power Device ◽  
Device Technology
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