Thermal Modeling of Multi-Fin Field Effect Transistor Structure Using Proper Orthogonal Decomposition

Wangkun Jia; Brian T. Helenbrook;  Ming-Cheng Cheng

doi:10.1109/ted.2014.2332414

Thermal Modeling of Multi-Fin Field Effect Transistor Structure Using Proper Orthogonal Decomposition

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332414 ◽

2014 ◽

Vol 61 (8) ◽

pp. 2752-2759 ◽

Cited By ~ 8

Author(s):

Wangkun Jia ◽

Brian T. Helenbrook ◽

Ming-Cheng Cheng

Keyword(s):

Proper Orthogonal Decomposition ◽

Field Effect ◽

Field Effect Transistor ◽

Thermal Modeling ◽

Orthogonal Decomposition ◽

Transistor Structure ◽

Effect Transistor ◽

Proper Orthogonal

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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Journal of Applied Physics ◽

10.1063/1.4936780 ◽

2015 ◽

Vol 118 (21) ◽

pp. 215701 ◽

Cited By ~ 19

Author(s):

Alexander Pooth ◽

Michael J. Uren ◽

Markus Cäsar ◽

Trevor Martin ◽

Martin Kuball

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Charge Movement ◽

Substrate Bias ◽

Transistor Structure ◽

Hetero Structure ◽

Carbon Doped ◽

Effect Transistor

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Proper orthogonal decomposition-based reduced basis element thermal modeling of integrated circuits

International Journal for Numerical Methods in Engineering ◽

10.1002/nme.5529 ◽

2017 ◽

Vol 112 (5) ◽

pp. 479-500 ◽

Cited By ~ 1

Author(s):

Daniel S. Meyer ◽

Brian T. Helenbrook ◽

Ming-C. Cheng

Keyword(s):

Integrated Circuits ◽

Proper Orthogonal Decomposition ◽

Thermal Modeling ◽

Orthogonal Decomposition ◽

Reduced Basis ◽

Basis Element ◽

Proper Orthogonal

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Deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance

2016 Dynamics of Systems, Mechanisms and Machines (Dynamics) ◽

10.1109/dynamics.2016.7819081 ◽

2016 ◽

Cited By ~ 1

Author(s):

Andriy Semenov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Deterministic Chaos ◽

Negative Resistance ◽

Transistor Structure ◽

Effect Transistor

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4812793 ◽

2013 ◽

Vol 31 (4) ◽

pp. 041203 ◽

Cited By ~ 8

Author(s):

Yan Zhu ◽

Mantu K. Hudait ◽

Dheeraj K. Mohata ◽

Bijesh Rajamohanan ◽

Suman Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

P Type

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Gate leakage reduction through the use of a gate-to-source/drain non-overlapped metal–oxide–semiconductor field-effect transistor structure

Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems ◽

10.1177/1740349911404304 ◽

2010 ◽

Vol 224 (4) ◽

pp. 173-181 ◽

Cited By ~ 1

Author(s):

A K Rana ◽

N Chand ◽

V Kapoor

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Transistor Structure ◽

Leakage Reduction ◽

Effect Transistor

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State Tomography of Layered Qubits via Spin Blockade Measurements on the Edge Qubit in a Spin Field-Effect Transistor Structure Embedded with Quantum Dots

10.1063/1.2730285 ◽

2007 ◽

Author(s):

K. Yuasa ◽

K. Okano ◽

H. Nakazato ◽

S. Kashiwada ◽

K. Yoh

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Spin Field ◽

State Tomography ◽

Effect Transistor ◽

Spin Blockade

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The additive white Gaussian noise impact on the deterministic chaos oscillator based on a field-effect transistor structure with negative resistance

2016 International Conference Radio Electronics & Info Communications (UkrMiCo) ◽

10.1109/ukrmico.2016.7739614 ◽

2016 ◽

Author(s):

Andriy Semenov

Keyword(s):

Gaussian Noise ◽

Field Effect ◽

Field Effect Transistor ◽

Additive White Gaussian Noise ◽

Deterministic Chaos ◽

Negative Resistance ◽

White Gaussian Noise ◽

Transistor Structure ◽

Noise Impact ◽

Effect Transistor

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Reduced order thermal modeling of data centers via proper orthogonal decomposition: a review

International Journal of Numerical Methods for Heat &amp Fluid Flow ◽

10.1108/09615531011048231 ◽

2010 ◽

Vol 20 (5) ◽

pp. 529-550 ◽

Cited By ~ 16

Author(s):

Emad Samadiani ◽

Yogendra Joshi

Keyword(s):

Proper Orthogonal Decomposition ◽

Data Centers ◽

Thermal Modeling ◽

Orthogonal Decomposition ◽

Reduced Order ◽

Proper Orthogonal

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Rigorous Study of Double Gate Tunneling Field Effect Transistor Structure Based on Silicon

Materials Focus ◽

10.1166/mat.2018.1600 ◽

2018 ◽

Vol 7 (6) ◽

pp. 866-872 ◽

Cited By ~ 7

Author(s):

N. Guenifi ◽

S. B. Rahi ◽

T. Ghodbane

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Transistor Structure ◽

Rigorous Study ◽

Effect Transistor ◽

Gate Tunneling

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Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

Applied Physics Letters ◽

10.1063/1.3670321 ◽

2011 ◽

Vol 99 (24) ◽

pp. 243504 ◽

Cited By ~ 104

Author(s):

V. V. Popov ◽

D. V. Fateev ◽

T. Otsuji ◽

Y. M. Meziani ◽

D. Coquillat ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Unit Cell ◽

Asymmetric Unit ◽

Transistor Structure ◽

Terahertz Detection ◽

Effect Transistor ◽

Asymmetric Unit Cell

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