Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

V. V. Popov; D. V. Fateev; T. Otsuji; Y. M. Meziani; D. Coquillat; W. Knap

doi:10.1063/1.3670321

Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

Applied Physics Letters ◽

10.1063/1.3670321 ◽

2011 ◽

Vol 99 (24) ◽

pp. 243504 ◽

Cited By ~ 104

Author(s):

V. V. Popov ◽

D. V. Fateev ◽

T. Otsuji ◽

Y. M. Meziani ◽

D. Coquillat ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Unit Cell ◽

Asymmetric Unit ◽

Transistor Structure ◽

Terahertz Detection ◽

Effect Transistor ◽

Asymmetric Unit Cell

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Terahertz detection in a slit-grating-gate field-effect-transistor structure

Solid-State Electronics ◽

10.1016/j.sse.2012.09.009 ◽

2013 ◽

Vol 86 ◽

pp. 64-67 ◽

Cited By ~ 10

Author(s):

D.M. Yermolayev ◽

K.M. Marem’yanin ◽

D.V. Fateev ◽

S.V. Morozov ◽

N.A. Maleev ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Terahertz Detection ◽

Effect Transistor

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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Journal of Applied Physics ◽

10.1063/1.4936780 ◽

2015 ◽

Vol 118 (21) ◽

pp. 215701 ◽

Cited By ~ 19

Author(s):

Alexander Pooth ◽

Michael J. Uren ◽

Markus Cäsar ◽

Trevor Martin ◽

Martin Kuball

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Charge Movement ◽

Substrate Bias ◽

Transistor Structure ◽

Hetero Structure ◽

Carbon Doped ◽

Effect Transistor

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Deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance

2016 Dynamics of Systems, Mechanisms and Machines (Dynamics) ◽

10.1109/dynamics.2016.7819081 ◽

2016 ◽

Cited By ~ 1

Author(s):

Andriy Semenov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Deterministic Chaos ◽

Negative Resistance ◽

Transistor Structure ◽

Effect Transistor

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4812793 ◽

2013 ◽

Vol 31 (4) ◽

pp. 041203 ◽

Cited By ~ 8

Author(s):

Yan Zhu ◽

Mantu K. Hudait ◽

Dheeraj K. Mohata ◽

Bijesh Rajamohanan ◽

Suman Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

P Type

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Gate leakage reduction through the use of a gate-to-source/drain non-overlapped metal–oxide–semiconductor field-effect transistor structure

Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems ◽

10.1177/1740349911404304 ◽

2010 ◽

Vol 224 (4) ◽

pp. 173-181 ◽

Cited By ~ 1

Author(s):

A K Rana ◽

N Chand ◽

V Kapoor

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Transistor Structure ◽

Leakage Reduction ◽

Effect Transistor

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State Tomography of Layered Qubits via Spin Blockade Measurements on the Edge Qubit in a Spin Field-Effect Transistor Structure Embedded with Quantum Dots

10.1063/1.2730285 ◽

2007 ◽

Author(s):

K. Yuasa ◽

K. Okano ◽

H. Nakazato ◽

S. Kashiwada ◽

K. Yoh

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Spin Field ◽

State Tomography ◽

Effect Transistor ◽

Spin Blockade

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The additive white Gaussian noise impact on the deterministic chaos oscillator based on a field-effect transistor structure with negative resistance

2016 International Conference Radio Electronics & Info Communications (UkrMiCo) ◽

10.1109/ukrmico.2016.7739614 ◽

2016 ◽

Author(s):

Andriy Semenov

Keyword(s):

Gaussian Noise ◽

Field Effect ◽

Field Effect Transistor ◽

Additive White Gaussian Noise ◽

Deterministic Chaos ◽

Negative Resistance ◽

White Gaussian Noise ◽

Transistor Structure ◽

Noise Impact ◽

Effect Transistor

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A generic numerical model on heterodyne terahertz detection in field effect transistor

2010 3rd International Congress on Image and Signal Processing ◽

10.1109/cisp.2010.5647135 ◽

2010 ◽

Author(s):

Zhifeng Yan ◽

Jingxuan Zhu ◽

Xinnan Lin ◽

Frank He ◽

Guozeng Wang ◽

...

Keyword(s):

Numerical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Terahertz Detection ◽

Effect Transistor

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Rigorous Study of Double Gate Tunneling Field Effect Transistor Structure Based on Silicon

Materials Focus ◽

10.1166/mat.2018.1600 ◽

2018 ◽

Vol 7 (6) ◽

pp. 866-872 ◽

Cited By ~ 7

Author(s):

N. Guenifi ◽

S. B. Rahi ◽

T. Ghodbane

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Transistor Structure ◽

Rigorous Study ◽

Effect Transistor ◽

Gate Tunneling

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Mechanical Stress Evaluation of Si Metal–Oxide–Semiconductor Field-Effect Transistor Structure Using Polarized Ultraviolet Raman Spectroscopy Measurements and Calibrated Technology-Computer-Aided-Design Simulations

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.016603 ◽

2011 ◽

Vol 51 (1) ◽

pp. 016603 ◽

Cited By ~ 2

Author(s):

Akira Satoh ◽

Tetsuya Tada ◽

Vladimir Poborchii ◽

Toshihiko Kanayama ◽

Shigeo Satoh ◽

...

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transistor Structure ◽

Stress Evaluation ◽

Computer Aided ◽

Effect Transistor ◽

Aided Design

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