In-Depth Electromagnetic Analysis of ESD Protection for Advanced CMOS Technology During Fast Transient and High-Current Surge

2014 ◽  
Vol 61 (6) ◽  
pp. 1900-1906 ◽  
Author(s):  
Philippe Galy ◽  
Wim Schoenmaker
Keyword(s):  
Cmos Technology ◽  
Electromagnetic Analysis ◽  
High Current ◽  
Esd Protection ◽  
Fast Transient

P-45: On-Chip ESD Protection Design for UXGA/HDTV LCoS in 0.35-μm CMOS Technology

2004 ◽  
Vol 35 (1) ◽  
pp. 404
Author(s):  
Ming-Dou Ker ◽  
Shih-Hung Chen ◽  
Tang-Kui Tseng
Keyword(s):  
Cmos Technology ◽  
Esd Protection ◽  
On Chip

Cell-Based ESD Diodes with a Zigzag-Shaped Layout to Enhance the ESD Survival Level

2016 ◽  
Vol 26 (02) ◽  
pp. 1750023
Author(s):  
Minoh Son ◽  
Changkun Park
Keyword(s):  
Integrated Circuits ◽  
Cmos Technology ◽  
Thermal Source ◽  
Esd Protection ◽  
A Cell ◽  
Protection Devices ◽  
Layout Technique ◽  
Typical Layout ◽  
Zigzag Shape ◽  
Survival Level

In this study, we propose cell-based diodes which are laid out with a zigzag shape as electrostatic discharge (ESD) protection elements to enhance the ESD survival level of the diodes. Generally, diodes are regarded as simple ESD protection devices in integrated circuits. During ESD events, the P–N junction of the ESD diode acts as a thermal source. In this study, we investigate a distributed layout method which relies on a cell-based ESD diode to prevent an excessive increase in the temperature at the P–N junction. However, although the distributed layout enhances the ESD survival levels of the ESD diode, the required area increases compared that of a typical layout. Thus, we propose a zigzag layout technique for the cell-based diode to reduce the area and obtain a high ESD survival level. To verify the feasibility of the zigzag layout techniques for cell-based diodes, we designed ESD diodes using 110[Formula: see text]nm RF CMOS technology. The experimental results successfully demonstrate the feasibility of the proposed method.

High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage

2019 ◽  
Vol 66 (7) ◽  
pp. 2884-2891 ◽  
Author(s):  
Da-Wei Lai ◽  
Gijs de Raad ◽  
Stephen Sque ◽  
Wim Peters ◽  
Theo Smedes
Keyword(s):  
High Voltage ◽  
Protection Device ◽  
Esd Protection ◽  
Fast Transient
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