Analytical and Finite-Element Modeling of a Two-Contact Circular Test Structure for Specific Contact Resistivity

2013 ◽  
Vol 60 (3) ◽  
pp. 1202-1207 ◽  
Author(s):  
Y. Pan ◽  
G. K. Reeves ◽  
P. W. Leech ◽  
A. S. Holland
Keyword(s):  
Finite Element ◽  
Finite Element Modeling ◽  
Contact Resistivity ◽  
Test Structure ◽  
Element Modeling ◽  
Circular Test ◽  
Specific Contact ◽  
Specific Contact Resistivity

scholarly journals Using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors

2015 ◽  
Vol 28 (3) ◽  
pp. 457-464
Author(s):  
Aaron Collins ◽  
Yue Pan ◽  
Anthony Holland
Keyword(s):  
Three Dimensional ◽  
Contact Resistivity ◽  
Test Structure ◽  
Contact Structures ◽  
Experimental Measurements ◽  
Circular Test ◽  
Bulk Semiconductors ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p+-type germanium (Ge) substrates and 200 nm of Titanium (Ti) on 4H-Silicon Carbide (SiC). The SCR obtained was (2.3-27)?10-6 ??cm2 for the Ni-Ge contacts and (1.3-2.4)?10-3 ??cm2 for the Ti-SiC.

Two-contact Circular Test Structure for Determining Specific Contact Resistivity

2013 ◽  
Vol 1553 ◽  
Author(s):  
Y. Pan ◽  
G. K. Reeves ◽  
P. W. Leech ◽  
P. Tanner ◽  
A. S. Holland
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Contact Resistivity ◽  
Test Structure ◽  
Metal Contacts ◽  
Circular Test ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Analytical Expressions ◽  
Geometrical Dimensions

ABSTRACTAs ohmic contacts decrease in size and approach nanoscale dimensions, accurate electrical characterization is essential, requiring the development of suitable test structures for this task. We present here a new test structure derived from the standard three-contact circular transmission line model (CTLM) [1], for determining the specific contact resistivity of ohmic contacts. This test structure minimizes sources of error which arise from the CTLM by – (i) reducing the number of contacts within one test pattern from three to two, (ii) ensuring the assumption of equipotential metal contacts used in modelling is more easily attained experimentally, and (iii) allowing the fabrication of reduced geometrical dimensions essential for determining low specific contact resistivity values. The analytical expressions are presented and experiment results are undertaken to demonstrate the accuracy of the technique. There are no error corrections required for determining contact parameters using the presented test structure.

Specific contact resistivity of Al-NiSi contacts using Cross Kelvin Resistor test structure chains

2005 ◽  
Author(s):  
Anthony S. Holland ◽  
Madhu Bhaskaran ◽  
Sharath Sriram ◽  
Geoffrey K. Reeves ◽  
Vykundh Ravichandran ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Test Structure ◽  
Specific Contact ◽  
Specific Contact Resistivity

The sidewall resistor—A novel test structure to reliably extract specific contact resistivity

1986 ◽  
Vol 7 (8) ◽  
pp. 477-479 ◽  
Author(s):  
W.M. Loh ◽  
P.J. Wright ◽  
T.A. Schreyer ◽  
S.E. Swirhun ◽  
K.C. Saraswat ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Test Structure ◽  
Specific Contact ◽  
Specific Contact Resistivity

scholarly journals Circular test structures for determining the specific contact resistance of ohmic contacts

2017 ◽  
Vol 30 (3) ◽  
pp. 313-326 ◽  
Author(s):  
Anthony Holland ◽  
Yue Pan ◽  
Mohammad Alnassar ◽  
Stanley Luong
Keyword(s):  
Finite Element ◽  
Contact Resistance ◽  
Finite Element Modeling ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Wave Mechanics ◽  
Element Modeling ◽  
Specific Contact ◽  
Modeling Software

Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process in the realm of electron wave mechanics, such an interface is practically characterised by its specific contact resistance. Error correction has been a major concern in regard to specific contact resistance test structures and investigations by finite element modeling demonstrate that test structures utilising circular contacts can be more reliable than those designed to have square shaped contacts as test contacts become necessarily smaller. Finite element modeling software NASTRAN can be used effectively for designing and modeling ohmic contact test structures and can be used to show that circular contacts are efficient in minimising error in determining specific contact resistance from such test structures. Full semiconductor modeling software is expensive and for ohmic contact investigations is not required when the approach used is to investigate test structures considering the ohmic interface as effectively resistive.

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