The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

2012 ◽  
Vol 59 (12) ◽  
pp. 3568-3573 ◽  
Author(s):  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Bong-Su Jo ◽  
Kyoung-Rok Han ◽  
Sung-Kye Park ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Flash Memory Cell

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

2009 ◽  
Vol 30 (11) ◽  
pp. 1188-1190 ◽  
Author(s):  
H.C. Ma ◽  
Y.L. Chou ◽  
J.P. Chiu ◽  
Tahui Wang ◽  
S.H. Ku ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Charge Effect ◽  
Noise Amplitude ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Flash Memory Cell ◽  
Trapped Charge

Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

2015 ◽  
Vol 36 (7) ◽  
pp. 678-680 ◽  
Author(s):  
Davide Resnati ◽  
Christian Monzio Compagnoni ◽  
Giovanni M. Paolucci ◽  
Carmine Miccoli ◽  
Alessandro S. Spinelli ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Random Telegraph Noise ◽  
Cell Position ◽  
Telegraph Noise ◽  
Memory Arrays
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