Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

2012 ◽  
Vol 59 (10) ◽  
pp. 2667-2674 ◽  
Author(s):  
Chung-Han Lin ◽  
Tyler A. Merz ◽  
Daniel R. Doutt ◽  
Jungwoo Joh ◽  
Jesús A. del Alamo ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electron Mobility ◽  
Defect Formation ◽  
High Electron Mobility Transistors ◽  
Nanometer Scale ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

2017 ◽  
Vol 70 ◽  
pp. 32-40 ◽  
Author(s):  
P.G. Whiting ◽  
M.R. Holzworth ◽  
A.G. Lind ◽  
S.J. Pearton ◽  
K.S. Jones ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Defect Formation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

2010 ◽  
Vol 97 (22) ◽  
pp. 223502 ◽  
Author(s):  
Chung-Han Lin ◽  
D. R. Doutt ◽  
U. K. Mishra ◽  
T. A. Merz ◽  
L. J. Brillson
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Nanometer Scale ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

2012 ◽  
Vol 52 (11) ◽  
pp. 2542-2546 ◽  
Author(s):  
P.G. Whiting ◽  
N.G. Rudawski ◽  
M.R. Holzworth ◽  
S.J. Pearton ◽  
K.S. Jones ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Defect Formation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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