Effect of Tunnel Recombination Junction on Crossover Between the Dark and Illuminated Current–Voltage Curves of Tandem Solar Cells

2012 ◽  
Vol 59 (9) ◽  
pp. 2327-2330 ◽  
Author(s):  
Braden Bills ◽  
Xianbo Liao ◽  
David W. Galipeau ◽  
Qi Hua Fan
2011 ◽  
Vol 181-182 ◽  
pp. 336-339
Author(s):  
Lan Li Chen ◽  
Ming Ji Shi ◽  
Jia Hui Yu

A new tunnel-recombination junction model was proposed to increase the recombination of n/p junctions in tandem solar cells. According to the model, we fabricated a new tunnel junction with a nanostructured amorphous silicon p+(na-Si p+) layer inserted between the n layer and the p layer. To compare with the conventional method, we fabricated another tunnel junction with an amorphous p+(a-Si p+) insertion layer. Both devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3, lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+insertion layer could be easily integrated into the tandem solar cell deposition process.


2016 ◽  
Vol 627 (1) ◽  
pp. 29-37 ◽  
Author(s):  
Fatima Maachou ◽  
Baya Zebentout ◽  
Asmaa Bensmain ◽  
Zineb Benamara ◽  
Tayeb Mohammed Brahim

2009 ◽  
Vol 18 (4) ◽  
pp. 1674-1678 ◽  
Author(s):  
Li Gui-Jun ◽  
Hou Guo-Fu ◽  
Han Xiao-Yan ◽  
Yuan Yu-Jie ◽  
Wei Chang-Chun ◽  
...  

2012 ◽  
Vol 159 ◽  
pp. 137-140
Author(s):  
Ming Ji Shi ◽  
Xin Feng Guo ◽  
Sheng Zhao Wang ◽  
Lan Li Chen

We report new results on a tunneling junction for tandem solar cells using a nano-structured amorphous silicon p+layer (na-Si p+) as the recombination layer inserted between the n layer and the p layer. Devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3, lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+insertion layer could be easily integrated into the tandem solar cell deposition process.


2020 ◽  
Vol 7 (11) ◽  
pp. 2791-2809
Author(s):  
Michele De Bastiani ◽  
Anand S. Subbiah ◽  
Erkan Aydin ◽  
Furkan H. Isikgor ◽  
Thomas G. Allen ◽  
...  

Here, we review the physics and the technology of the recombination junction in perovskite-based tandem solar cells, with a summary of the most successful works.


2017 ◽  
Vol 8 (6) ◽  
pp. 1701609 ◽  
Author(s):  
Florent Sahli ◽  
Brett A. Kamino ◽  
Jérémie Werner ◽  
Matthias Bräuninger ◽  
Bertrand Paviet-Salomon ◽  
...  

Author(s):  
Claire Blaga ◽  
Gabriel Christmann ◽  
Mathieu Boccard ◽  
Christophe Ballif ◽  
Sylvain Nicolay ◽  
...  

As the efficiency of commercial crystalline silicon solar cells approaches their maximum theoretical efficiency, tandem architectures are becoming increasingly popular to continue the push to higher photovoltaic performances. Thin-film materials...


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