Hole diffusion at the recombination junction of thin film tandem solar cells and its effect on the illuminated current–voltage characteristic

2000 ◽  
Vol 88 (5) ◽  
pp. 2853-2861 ◽  
Author(s):  
N. Palit ◽  
A. Dasgupta ◽  
S. Ray ◽  
P. Chatterjee
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Tandem Solar Cells ◽  
Current Voltage ◽  
Recombination Junction

Analysis of the Ideality Factor of a-Si:H Solar Cells

2011 ◽  
Vol 133 (1) ◽  
Author(s):  
A. Al Tarabsheh ◽  
I. Etier
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Ideality Factor ◽  
Applied Voltage ◽  
Transport Equations ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage

This paper analyzes the ideality factor of amorphous silicon (a-Si:H) solar cells as a function of both the thickness of the intrinsic layer and the applied voltage to the cells. The ideality factor in this work is extracted from the current/voltage characteristic that is calculated by solving the continuity and transport equations and taking into account the contributions of diffusion and drift currents for minority and majority carriers and, especially, the nonequality of mobilities and lifetimes of electrons and holes in a-Si:H solar cells.

Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments

2014 ◽  
Vol 59 (6) ◽  
pp. 879-883 ◽  
Author(s):  
N. M. Lebedeva ◽  
A. A. Usikova ◽  
V. V. Evstropov ◽  
M. V. Lebedev ◽  
V. P. Ulin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Dark Current ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage
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