High-Frequency Modeling of Poly-Si Thin-Film Transistors for Low-Cost RF Applications

2012 ◽  
Vol 59 (9) ◽  
pp. 2296-2301 ◽  
Author(s):  
Soo Youn Kim ◽  
Wing-Fai Loke ◽  
Byunghoo Jung ◽  
Kaushik Roy
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Rf Applications ◽  
Si Thin Film

Poly-Si Thin-Film Transistors: An Efficient and Low-Cost Option for Digital Operation

2007 ◽  
Vol 54 (11) ◽  
pp. 2918-2929 ◽  
Author(s):  
Jing Li ◽  
Aditya Bansal ◽  
Kaushik Roy
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Si Thin Film

Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors

2013 ◽  
Vol 34 (8) ◽  
pp. 1020-1022 ◽  
Author(s):  
Kun-Ming Chen ◽  
Tzu-I Tsai ◽  
Ting-Yao Lin ◽  
Horng-Chih Lin ◽  
Tien-Sheng Chao ◽  
...  
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Thin Film Transistors ◽  
Thickness Effect ◽  
Channel Thickness ◽  
Si Thin Film ◽  
High Frequency Performance

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Influence of melt depth in laser crystallized poly-Si thin film transistors

1997 ◽  
Vol 82 (8) ◽  
pp. 4086-4094 ◽  
Author(s):  
S. D. Brotherton ◽  
D. J. McCulloch ◽  
J. P. Gowers ◽  
J. R. Ayres ◽  
M. J. Trainor
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Thin Film

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

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