Junction Temperature Investigations Based on a General Semi-analytical Formulation of Forward Voltage of Power Diodes

2012 ◽  
Vol 59 (6) ◽  
pp. 1716-1722 ◽  
Author(s):  
Zoubir Khatir
Keyword(s):  
Junction Temperature ◽  
Forward Voltage ◽  
Analytical Formulation ◽  
Power Diodes

A non-contact method for determining the junction temperature of GaN-based blue light LED

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740023
Author(s):  
Guo Jie ◽  
Junshan Ma ◽  
Rao Feng
Keyword(s):  
Comparative Analysis ◽  
Standard Deviation ◽  
Blue Light ◽  
Junction Temperature ◽  
Contact Method ◽  
Forward Voltage ◽  
Spectral Parameters ◽  
Blue Led ◽  
Novel Method

A novel method to determine the junction temperature of GaN type blue light LED based on the spectral parameters is proposed. In this method, the relationships among LED junction temperature, centroid wavelength and FWHM are obtained in the lab, and then the junction temperature of operating LED of the same type can be derived from this relationship. A comparative analysis of the junction temperatures which are measured with the centroid wavelength-FWHM method and with the forward voltage method is performed. The standard deviation between these two methods is found to be about 2.3[Formula: see text]C. Therefore, the combination of centroid wavelength and FWHM can be used to determine the junction temperature of GaN-based blue LED.

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET

2017 ◽  
Vol 897 ◽  
pp. 214-217 ◽  
Author(s):  
Kumiko Konishi ◽  
Ryusei Fujita ◽  
Akio Shima ◽  
Yasuhiro Shimamoto
Keyword(s):  
Electrical Measurement ◽  
Stacking Fault ◽  
Junction Temperature ◽  
Expansion Velocity ◽  
Forward Voltage ◽  
Forward Current ◽  
Before And After ◽  
Voltage Degradation ◽  
Good Agreement

We present a model to explain forward voltage degradation of body diode in 4H-SiC MOSFET, and evaluate the velocity of SF expansion. First, by using in-situ photoluminescence (PL) observation, we investigated how a stacking fault (SF) expands from a basal plane dislocations (BPD) in the 4H-SiC epitaxial layer. Second, double-diffused MOSFETs were developed and measured before and after degradation. Then, the characteristics of the forward voltage degradation were modeled by a combination of PL imaging and electrical measurement, and the calculated characteristics are in good agreement with the measured ones. Finally, we tested the SiC MOSFETs under various stress conditions and evaluated the velocity of the SF expansion by calculation. This results indicate that the velocity of SF expansion increased with increasing forward current density and junction temperature.

The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 612-615 ◽  
Author(s):  
Pavel Hazdra ◽  
Rupendra Kumar Sharma ◽  
Stanislav Popelka
Keyword(s):  
Radiation Damage ◽  
Peak Concentration ◽  
Voltage Drop ◽  
Electron Trap ◽  
Carbon Ions ◽  
Forward Voltage ◽  
Donor Doping ◽  
Power Diodes ◽  
Projected Range ◽  
Forward Voltage Drop

Electronic properties of radiation damage produced in 1700 V 4H-SiC MPS diodes by proton and carbon irradiation were investigated and compared. 4H-SiC epilayers, which formed the lowdoped N-base of MPS power diodes, were irradiated to identical depth with 670 keV protons and 9.6 MeV C4+ ions. Results show that irradiation with both projectiles produces strongly localized damage (deep levels) peaking at ion’s projected range. Compared to protons, heavier carbon ions introduce more defects with deeper levels in the SiC bandgap and more stable damage. Radiation damage act as electron traps and compensates donor doping of the epilayer and decreases electron mobility. Forward voltage drop of irradiated diodes then sharply increases when the peak concentration of introduced acceptor levels donor doping. The effect of both the proton and carbon irradiation can be simulated using a simple model accounting only for one dominant electron trap.

Junction Temperature Measurements in Deep-UV Light-Emitting Diodes

2004 ◽  
Vol 831 ◽  
Author(s):  
Y. Xi ◽  
J.-Q. Xi ◽  
Th. Gessmann ◽  
J. M. Shah ◽  
J. K. Kim ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Energy Gap ◽  
Uv Light ◽  
Accurate Method ◽  
High Energy ◽  
Junction Temperature ◽  
Forward Voltage ◽  
Light Emitting ◽  
Thermal Paste ◽  
Carrier Temperature

ABSTRACTThe junction temperature of AlGaN/GaN ultraviolet (UV) Light-Emitting Diodes (LEDs) emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate method (± 3 °C). A theoretical model for the dependence of the diode junction voltage (Vj) on junction temperature (T) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6 K/W is obtained with the AlGaN/GaN LED sample mounted with thermal paste on a heat sink.

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