Performance Comparison of Single- and Dual-Gate Carbon-Nanotube Thin-Film Field-Effect Transistors

2011 ◽  
Vol 58 (7) ◽  
pp. 1922-1927 ◽  
Author(s):  
K. C. Narasimhamurthy ◽  
Roy Paily
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Performance Comparison ◽  
Dual Gate

Performance Comparison of Interdigitated Thin-Film Field-Effect Transistors Using Different Purity Semiconducting Carbon Nanotubes

2011 ◽  
Vol 181-182 ◽  
pp. 343-348
Author(s):  
K.C. Narasimhamurthy ◽  
Roy Paily Palathinkal
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Channel Length ◽  
Performance Comparison ◽  
Saturation Region

In this paper, we present the fabrication and characterization of semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs). High-k dielectric material, hafnium-oxide (HfOX) is used as the gate-oxide of the device. A Thin-film of semi-conducting single walled carbon nanotube (SWCNT) is deposited on the amino-silane modified HfOX surface. Two types of SN-TFTs with interdigitated source and drain contacts are fabricated using 90% and 95% purity of semiconducting SWCNTs (s-SWCNT), have exhibited a p-type behavior with a distinct linear and saturation region of operation. For 20 µm channel length SN-TFT with 95% pure s-SWCNTs has a peak on-off current ratio of 3.5×104 and exhibited a transconductance of 950 µS. The SN-TFT fabricated with HfOX gate oxide has shown a steep sub-threshold slope of 750 mV/decade and threshold voltage of -0.7 V. The SN-TFT of channel length 50 µm has exhibited a maximum mobility of 26.9 cm2/V•s.

Carbon Nanotube and Graphene Hybrid Thin Film for Transparent Electrodes and Field Effect Transistors

2014 ◽  
Vol 26 (25) ◽  
pp. 4247-4252 ◽  
Author(s):  
Sung Ho Kim ◽  
Wooseok Song ◽  
Min Wook Jung ◽  
Min-A Kang ◽  
Kiwoong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transparent Electrodes ◽  
Hybrid Thin Film

scholarly journals Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon Nanotube Thin Film Gate Electrode

2010 ◽  
Vol 132 (41) ◽  
pp. 14429-14436 ◽  
Author(s):  
Palanisamy Ramesh ◽  
Mikhail E. Itkis ◽  
Elena Bekyarova ◽  
Feihu Wang ◽  
Sandip Niyogi ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene ◽  
Gate Electrode ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon
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