Time-Dependent Many-Particle Simulation for Resonant Tunneling Diodes: Interpretation of an Analytical Small-Signal Equivalent Circuit

2011 ◽  
Vol 58 (7) ◽  
pp. 2104-2112 ◽  
Author(s):  
Fabio Lorenzo Traversa ◽  
Emanuela Buccafurri ◽  
Alfonso Alarcon ◽  
Guillermo Albareda ◽  
Raphaël Clerc ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Resonant Tunneling ◽  
Particle Simulation ◽  
Time Dependent ◽  
Small Signal ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz

2019 ◽  
Vol 67 (11) ◽  
pp. 4332-4340
Author(s):  
Razvan Morariu ◽  
Jue Wang ◽  
Andrei Catalin Cornescu ◽  
Abdullah Al-Khalidi ◽  
Afesomeh Ofiare ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Resonant Tunneling ◽  
Circuit Modeling ◽  
Small Signal ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Equivalent Circuit Modeling

Factors reducing the cut-off frequency of resonant tunneling diodes

2012 ◽  
Vol 4 (6) ◽  
pp. 605-611
Author(s):  
Nikolay Alkeev ◽  
Stanislav Averin ◽  
Aleksey Dorofeev ◽  
Nadezda Gladysheva
Keyword(s):  
Quantum Well ◽  
Equivalent Circuit ◽  
Delay Time ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Electron States ◽  
Tunneling Diodes ◽  
Active Layers ◽  
In Series ◽  
Additional Resistance

The impedance dependence of resonant tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is investigated in the range of 0.1–40 GHz. The analysis shows that the impedance of about 90% of unbiased RTDs is well described by an equivalent circuit (EC) consisting of parallel-connected resistance and capacitance and an additional resistance connected in series with this parallel combination. When a bias voltage is applied to these RTDs, one needs a “quantum” inductance LQ to describe the impedance behavior. We find the value of LQ and calculate the delay time of electrons in the quantum well (QW) of an RTD. The impedance of the rest 10% of the RTDs is well described by an EC that takes into account the recharge of localized electron states at the heterointerfaces of the active layers. Expressions for the cut-off frequencies that take into account the delay of electrons in the QW and the localized electron states at the heterointerfaces are derived. It is shown that the delay of electrons in the QW and localized electron states at the heterointerfaces may significantly reduce the cut-off frequency of RTDs.

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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