scholarly journals Time‐dependent modeling of resonant‐tunneling diodes from direct solution of the Schrödinger equation

1988 ◽  
Vol 64 (7) ◽  
pp. 3564-3569 ◽  
Author(s):  
R. K. Mains ◽  
G. I. Haddad
2011 ◽  
Vol 58 (7) ◽  
pp. 2104-2112 ◽  
Author(s):  
Fabio Lorenzo Traversa ◽  
Emanuela Buccafurri ◽  
Alfonso Alarcon ◽  
Guillermo Albareda ◽  
Raphaël Clerc ◽  
...  

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


Author(s):  
Niels Engholm Henriksen ◽  
Flemming Yssing Hansen

This introductory chapter considers first the relation between molecular reaction dynamics and the major branches of physical chemistry. The concept of elementary chemical reactions at the quantized state-to-state level is discussed. The theoretical description of these reactions based on the time-dependent Schrödinger equation and the Born–Oppenheimer approximation is introduced and the resulting time-dependent Schrödinger equation describing the nuclear dynamics is discussed. The chapter concludes with a brief discussion of matter at thermal equilibrium, focusing at the Boltzmann distribution. Thus, the Boltzmann distribution for vibrational, rotational, and translational degrees of freedom is discussed and illustrated.


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