Physical Foundation of a Recently Proposed Schottky-Contact Model

2011 ◽  
Vol 58 (3) ◽  
pp. 874-875 ◽  
Author(s):  
Dietmar Schroeder
Keyword(s):  
Schottky Contact ◽  
Contact Model ◽  
Physical Foundation

The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes

2019 ◽  
Vol 963 ◽  
pp. 553-557
Author(s):  
Yaren Huang ◽  
Jonas Buettner ◽  
Benedikt Lechner ◽  
Gerhard Wachutka
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Schottky Contact ◽  
Wide Band ◽  
Contact Model ◽  
Carrier Injection ◽  
Wide Band Gap ◽  
Tunneling Model ◽  
P Type ◽  
The Impact

The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ”realistic” devices, where we have to cope with serious problems, such as a shifting threshold voltage, reduced forward conductivity, and no noticeable conductivity modulation by minority carrier injection from p+-emitters, in matching measured data with simulation results, as a consequence of the significant impact of non-ideal poor Ohmic contacts. In this work, we used a Schottky contact model together with a barrier tunneling model, instead of common ideal Ohmic contact model, to simulate the non-ideal Ohmic contact on SiC MPS diodes. Based on this approach, the I-V characteristics of real Ohmic contacts can be reproduced in high-fidelity simulations, providing us physical insight of the observed operational behavior.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Microstructure simulation of early paper forming using immersed boundary methods

TAPPI Journal ◽  
2011 ◽  
Vol 11 (11) ◽  
pp. 23-30 ◽  
Author(s):  
ANDREAS MARK ◽  
ERIK SVENNING ◽  
ROBERT RUNDQVIST ◽  
FREDRIK EDELVIK ◽  
ERIK GLATT ◽  
...  
Keyword(s):  
Early Paper ◽  
Contact Model ◽  
Fiber Suspension ◽  
Beam Equation ◽  
Immersed Boundary ◽  
Paper Machine ◽  
Immersed Boundary Methods ◽  
Element Discretization ◽  
Microstructure Simulation ◽  
Boundary Methods

Paper forming is the first step in the paper machine where a fiber suspension leaves the headbox and flows through a forming fabric. Complex physical phenomena occur as the paper forms, during which fibers, fillers, fines, and chemicals added to the suspension interact. Understanding this process is important for the development of improved paper products because the configuration of the fibers during this step greatly influences the final paper quality. Because the effective paper properties depend on the microstructure of the fiber web, a continuum model is inadequate to explain the process and the properties of each fiber need to be accounted for in simulations. This study describes a new framework for microstructure simulation of early paper forming. The simulation framework includes a Navier-Stokes solver and immersed boundary methods to resolve the flow around the fibers. The fibers were modeled with a finite element discretization of the Euler-Bernoulli beam equation in a co-rotational formulation. The contact model is based on a penalty method and includes friction and elastic and inelastic collisions. We validated the fiber model and the contact model against demanding test cases from the literature, with excellent results. The fluid-structure interaction in the model was examined by simulating an elastic beam oscillating in a cross flow. We also simulated early paper formation to demonstrate the potential of the proposed framework.

scholarly journals Application of the Sensory Contact Model for Pharmacological Studies under Simulated Clinical Conditions

2007 ◽  
Author(s):  
Natalia Kudryavtseva ◽  
Damira Avgustinovich ◽  
Natalia Bondar ◽  
Michael Tenditnik ◽  
Irina Kovalenko
Keyword(s):  
Contact Model ◽  
Sensory Contact ◽  
Sensory Contact Model ◽  
Pharmacological Studies ◽  
Clinical Conditions

scholarly journals Contact Model of Revolute Joint with Clearance Based on Fractal Theory

2018 ◽  
Vol 31 (1) ◽  
Author(s):  
Shi-Hua Li ◽  
Xue-Yan Han ◽  
Jun-Qi Wang ◽  
Jing Sun ◽  
Fu-Juan Li
Keyword(s):  
Fractal Theory ◽  
Contact Model ◽  
Revolute Joint
Sign in / Sign up

Export Citation Format

Share Document