scholarly journals Tunnel Diode Modeling, Including Nonlocal Trap-Assisted Tunneling: A Focus on III–V Multijunction Solar Cell Simulation

2010 ◽  
Vol 57 (10) ◽  
pp. 2564-2571 ◽  
Author(s):  
Mathieu Baudrit ◽  
Carlos Algora
Keyword(s):  
Solar Cell ◽  
Tunnel Diode ◽  
Trap Assisted Tunneling ◽  
Cell Simulation ◽  
Assisted Tunneling ◽  
Multijunction Solar Cell

A Multijunction Solar Cell Simulation Program for the Development of Concentration Systems

2007 ◽  
Author(s):  
J. A. Lopez Villanueva ◽  
V. Diaz ◽  
S. Rodriguez Bolivar ◽  
J.A.Jimenez Tejada ◽  
E. Rodriguez
Keyword(s):  
Solar Cell ◽  
Simulation Program ◽  
Cell Simulation ◽  
Multijunction Solar Cell

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Trap-Assisted Tunneling in MIS and Schottky Structures

1983 ◽  
Vol 79 (1) ◽  
pp. 223-236 ◽  
Author(s):  
F. Campabadal ◽  
V. Milian ◽  
X. Aymerich-Humet
Keyword(s):  
Trap Assisted Tunneling ◽  
Assisted Tunneling

scholarly journals Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls

2021 ◽  
pp. 100083
Author(s):  
Mathieu de Lafontaine ◽  
Erwine Pargon ◽  
Guillaume Gay ◽  
Camille Petit-Etienne ◽  
Sylvain David ◽  
...  
Keyword(s):  
Solar Cell ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
Multijunction Solar Cell

scholarly journals Trap-assisted tunneling in AlGaN avalanche photodiodes

AIP Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 065016 ◽  
Author(s):  
Z. G. Shao ◽  
Q. J. Gu ◽  
X. F. Yang ◽  
J. Zhang ◽  
Y. W. Kuang ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling
Sign in / Sign up

Export Citation Format

Share Document