Tunneling Magnetoresistance Properties in Ballistic Spin Field-Effect Transistors

2010 ◽  
Vol 57 (8) ◽  
pp. 2005-2012 ◽  
Author(s):  
Kai-Ming Jiang ◽  
Rong Zhang ◽  
Jun Yang ◽  
Chun-Xiao Yue ◽  
Zu-Yao Sun
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Magnetoresistance ◽  
Spin Field ◽  
Ballistic Spin

Comprehensive study of spin field effect transistors with co-graphene ferromagnetic contacts

2021 ◽  
Vol 517 ◽  
pp. 167410
Author(s):  
Neetu Gyanchandani ◽  
Santosh Pawar ◽  
Prashant Maheshwary ◽  
Kailash Nemade
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Spin Field ◽  
Comprehensive Study

scholarly journals Spin Field Effect Transistors with Ultracold Atoms

2008 ◽  
Vol 101 (26) ◽  
Author(s):  
J. Y. Vaishnav ◽  
Julius Ruseckas ◽  
Charles W. Clark ◽  
Gediminas Juzeliūnas
Keyword(s):  
Field Effect ◽  
Ultracold Atoms ◽  
Field Effect Transistors ◽  
Spin Field

MAGNETIC SWITCHING EFFECT IN SPIN FIELD-EFFECT TRANSISTORS

2010 ◽  
Vol 24 (23) ◽  
pp. 4501-4507
Author(s):  
JUN YANG ◽  
KAI-MING JIANG ◽  
WEN YUAN WU ◽  
YAN CHUN GONG
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Switching Effect ◽  
Spin Orbit Coupling ◽  
Switching Characteristic ◽  
Potential Barriers ◽  
Spin Field ◽  
Magnetic Switching ◽  
The Magnetic Field

Taking account the presence of external magnetic field, we study the conductance properties in spin field-effect transistors (SFET). It is shown that the conductance of the SFET exhibits an excellent magnetic switching characteristic for high potential barriers, and it is more and more pronounced with the potential barrier strength increasing. According to the effect, we can switch the SFET on or off by tuning the strength of the magnetic field. We also study how the conductance of the SFET is manipulated by spin–orbit coupling strength and spin polarization in source and drain.

Ballistic transport in extended Datta–Das spin field effect transistors

2011 ◽  
Vol 151 (18) ◽  
pp. 1214-1219 ◽  
Author(s):  
Yun-Chang Xiao ◽  
Rui Zhu ◽  
Wen-Ji Deng
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Spin Field

Electrically reconfigurable logic design using multi-gate spin Field Effect Transistors

2019 ◽  
Vol 90 ◽  
pp. 278-284 ◽  
Author(s):  
Gul Faroz Ahmad Malik ◽  
Mubashir Ahmad Kharadi ◽  
Farooq Ahmad Khanday
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Design ◽  
Reconfigurable Logic ◽  
Spin Field
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