On the Suitability of a High-$k$ Gate Dielectric in Nanoscale FinFET CMOS Technology

2008 ◽  
Vol 55 (7) ◽  
pp. 1714-1719 ◽  
Author(s):  
Shishir Agrawal ◽  
Jerry G. Fossum
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
High K ◽  
High K Gate Dielectric

Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32nm CMOS technology

2010 ◽  
Vol 87 (3) ◽  
pp. 267-270 ◽  
Author(s):  
J. Miyoshi ◽  
J.A. Diniz ◽  
A.D. Barros ◽  
I. Doi ◽  
A.A.G. Von Zuben
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
Aluminum Oxynitride ◽  
High K ◽  
Titanium Aluminum ◽  
High K Gate Dielectric

Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

2002 ◽  
Vol 303 (1) ◽  
pp. 54-63 ◽  
Author(s):  
P.S. Lysaght ◽  
P.J. Chen ◽  
R. Bergmann ◽  
T. Messina ◽  
R.W. Murto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric
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