Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3-D Simulation

2008 ◽  
Vol 55 (5) ◽  
pp. 1177-1184 ◽  
Author(s):  
Hui Zhao ◽  
Yee-Chia Yeo ◽  
Subhash C. Rustagi ◽  
Ganesh Shankar Samudra
Keyword(s):  
Electric Field ◽  
Structural Optimization ◽  
Device Performance ◽  
Fringing Electric Field

scholarly journals The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 712
Author(s):  
Wen-Chieh Ho ◽  
Yao-Hsing Liu ◽  
Wen-Hsuan Wu ◽  
Sung-Wen Huang Chen ◽  
Jerry Tzou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electric Field ◽  
Structural Optimization ◽  
Breakdown Voltage ◽  
Device Performance ◽  
Free Standing ◽  
High Crystalline Quality ◽  
Mesa Structure ◽  
High Breakdown Voltage ◽  
Structure Improvement

In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm2 and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60° bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance.

scholarly journals Uncertainty in multiple penetration depth fringing electric field sensor measurements

2002 ◽  
Vol 51 (6) ◽  
pp. 1192-1199 ◽  
Author(s):  
A.V. Mamishev ◽  
S.R. Cantrell ◽  
Y. Du ◽  
B.C. Lesieutre ◽  
M. Zahn
Keyword(s):  
Electric Field ◽  
Penetration Depth ◽  
Electric Field Sensor ◽  
Field Sensor ◽  
Fringing Electric Field

scholarly journals Understanding of Photophysical Processes in DIO Additive-Treated PTB7:PC71BM Solar Cells

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1139
Author(s):  
Xiaojun Su ◽  
Rong Hu ◽  
Guanzhao Wen ◽  
Xianshao Zou ◽  
Mengyao Qing ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Time Scale ◽  
Polymer Solar Cells ◽  
Acid Methyl Ester ◽  
Device Performance ◽  
Operating Voltage ◽  
Exciton Dissociation ◽  
Carrier Recombination ◽  
Dissociation Efficiency

1,8-diiodooctane (DIO) additive is an important method for optimizing the morphology and device performance of polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7)-based polymer solar cells. However, the effect of DIO additive on charge photogeneration dynamics of PTB7-based polymer solar cells is still poorly understood. In this work, the effect of DIO additive on the carrier photogeneration dynamics, as well as device performance of PTB7: [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) solar cells was studied. Bias-dependent photoluminescence (PL) experiments of a neat PTB7 device show that the exciton cannot be dissociated by the electric field in the device within the operating voltage range, but it can be effectively dissociated by the high electric field. PL and time-resolved PL studies show that DIO additive reduces the phase size of PTB7 in the blend film, resulting in an increased exciton dissociation efficiency. The carrier recombination processes were studied by transient absorption, which shows geminate carrier recombination was suppressed in the DIO-treated PTB7:PC71BM device in ultrafast time scale. The increased exciton dissociation efficiency and suppressed carrier recombination in ultrafast time scale play an important role for DIO-treated PTB7:PC71BM solar cells to attain a higher power conversion efficiency.

Characterization of fringing electric field on capacitive RF MEMS switch membrane

2015 ◽  
Vol 27 (2) ◽  
pp. 24138
Author(s):  
李君儒 Li Junru ◽  
高杨 Gao Yang ◽  
何婉婧 He Wanjing ◽  
蔡洵 Cai Xun
Keyword(s):  
Electric Field ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Fringing Electric Field

Study of Anode Modification and Bias Voltage Treatment on Organic Solar Cells with Rubrene/ C60 Heterojunctions

2011 ◽  
Vol 295-297 ◽  
pp. 506-510
Author(s):  
Bing Wu ◽  
Peng Yi Liu ◽  
Zi Guo Chen ◽  
Jing Cao
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Power Conversion Efficiency ◽  
Bias Voltage ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Open Circuit ◽  
Device Performance ◽  
Anode Modification

The organic solar cells with a structure of ITO/Rubrene(35 nm)/C60(35 nm)/BCP (6 nm)/Al(150 nm) was fabricated and the influence of anode modifying layer(MoO3) and 3V bias voltage treatment on device performance were investigated. The experiment results show, inserting anode modifying layer, the open-circuit voltage and the power conversion efficiency were almost increased by a factor of 5.3 and 11.3, respectively. The anode modifying layer can effectively enhance the built-in electric field and improve dissociation and transport excitons. The bias voltage treatment can improve the performance of defective devices by burning partial defects, but there is little effect for too few defective devices.

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