Analysis of Fringing-Electric-Field-Related Capacitance Behavior of Narrow-Channel FD SOI NMOS Devices Using 3D Simulation

Author(s):  
C. Chen ◽  
O. Lin ◽  
J. Kuo
2002 ◽  
Vol 51 (6) ◽  
pp. 1192-1199 ◽  
Author(s):  
A.V. Mamishev ◽  
S.R. Cantrell ◽  
Y. Du ◽  
B.C. Lesieutre ◽  
M. Zahn

2015 ◽  
Vol 27 (2) ◽  
pp. 24138
Author(s):  
李君儒 Li Junru ◽  
高杨 Gao Yang ◽  
何婉婧 He Wanjing ◽  
蔡洵 Cai Xun

2006 ◽  
Vol 6 (6) ◽  
pp. 1602-1608 ◽  
Author(s):  
Xiaobei Li ◽  
Gabe Rowe ◽  
Valerie Inclan ◽  
Alexander V. Mamishev

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