Analysis of Fringing-Electric-Field-Related Capacitance Behavior of Narrow-Channel FD SOI NMOS Devices Using 3D Simulation
2003 ◽
Vol 16
(5)
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pp. 645-653
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2016 ◽
pp. 430-434
2002 ◽
Vol 51
(6)
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pp. 1192-1199
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2013 ◽
Vol 26
(2)
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pp. 161-165
Keyword(s):
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2008 ◽
Vol 55
(5)
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pp. 1177-1184
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