New Method for Evaluating Electric Field at Junctions of DRAM Cell Transistors by Measuring Junction Leakage Current

2009 ◽  
Vol 56 (2) ◽  
pp. 252-259
Author(s):  
Yuki Mori ◽  
Shin'ichiro Kimura ◽  
Ren-ichi Yamada
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
New Method ◽  
Measuring Junction

Numerical Simulation of Leakage Current on Conductive Insulator Surface

2019 ◽  
Vol 8 (4) ◽  
pp. 9487-9492
Keyword(s):  
Numerical Simulation ◽  
Electric Field ◽  
Leakage Current ◽  
Method Of Lines ◽  
Electron Attachment ◽  
Negative Ions ◽  
Conduction Current ◽  
Insulator Surface ◽  
Finite Difference Approximations ◽  
Positive Ions

The outdoor insulator is commonly exposed to environmental pollution. The presence of water like raindrops and dew on the contaminant surface can lead to surface degradation due to leakage current. However, the physical process of this phenomenon is not well understood. Hence, in this study we develop a mathematical model of leakage current on the outdoor insulator surface using the Nernst Planck theory which accounts for the charge transport between the electrodes (negative and positive electrode) and charge generation mechanism. Meanwhile the electric field obeys Poisson’s equation. Method of Lines technique is used to solve the model numerically in which it converts the PDE into a system of ODEs by Finite Difference Approximations. The numerical simulation compares reasonably well with the experimental conduction current. The findings from the simulation shows that the conduction current is affected by the electric field distribution and charge concentration. The rise of the conduction current is due to the distribution of positive ion while the dominancy of electron attachment with neutral molecule and recombination with positive ions has caused a significant reduction of electron and increment of negative ions.

Effects of reduced internal electric field in InGaN/pseudo-AlInGaN multi-quantum-well on forward leakage current and photocurrent properties

2019 ◽  
Vol 126 (4) ◽  
pp. 045703 ◽  
Author(s):  
Byung-Guon Park ◽  
Reddeppa Maddaka ◽  
Thi Kim Phung Nguyen ◽  
Koteswara Rao Peta ◽  
Young-Kyun Noh ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Leakage Current ◽  
Internal Electric Field ◽  
Multi Quantum Well

scholarly journals 102 The proposal of method reducing the leakage current in an elevator : New method of the passive filter

2009 ◽  
Vol 2008 (0) ◽  
pp. 23-26 ◽  
Author(s):  
Junji TAKEDA ◽  
Kazuo SHIMANE ◽  
Takayoshi TAKEDA ◽  
Hiroaki MATSUOKA ◽  
Hiroshi MOCHIKAWA ◽  
...  
Keyword(s):  
Leakage Current ◽  
New Method ◽  
Passive Filter

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

scholarly journals Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

2017 ◽  
Vol 24 (2) ◽  
pp. 255-264 ◽  
Author(s):  
Martin Kuparowitz ◽  
Vlasta Sedlakova ◽  
Lubomir Grmela
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Leakage Current ◽  
Niobium Oxide ◽  
Ion Concentration ◽  
Homogeneous Distribution ◽  
Insulating Layer ◽  
Ion Drift ◽  
Positive Ions ◽  
And Diffusion

AbstractHigh temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL) variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5. Here, the equilibrium between the ion drift and diffusion is achieved. The process of leakage current degradation is therefore partially reversible. When the external electric field is lowered, or the samples are shortened, the leakage current for a given voltage decreases with time and the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5, thus the ion redistribution by diffusion becomes dominant.

Second Order Nonlinear Optical Thin Films Fabricated from Electric Field-Assisted Electrostatic Self-Assembled Monolayer Method

1999 ◽  
Vol 561 ◽  
Author(s):  
Y. Liu ◽  
R.O. Claus ◽  
D. Marciu ◽  
C. Figura ◽  
J.R. Heflin
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Nonlinear Optical ◽  
Second Harmonic ◽  
New Method ◽  
Multilayer Thin Films ◽  
Self Assembled Monolayer ◽  
Harmonic Intensity ◽  
Self Assembled ◽  
First Time

ABSTRACTA new method for the build-up of non-centrosymmetric multilayer thin films has been developed for the first time using an electric field-assisted electrostatic self-assembled monolayer (EF-ESAM) technique. An increase by 116% of the second-harmonic intensity of the films has been observed in comparison with that of ESAM film.

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