Modeling of Short-Channel Effects in Organic Thin-Film Transistors

2008 ◽  
Vol 55 (10) ◽  
pp. 2561-2567 ◽  
Author(s):  
S. Locci ◽  
M. Morana ◽  
E. Orgiu ◽  
A. Bonfiglio ◽  
P. Lugli
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Short Channel Effects ◽  
Organic Thin Film ◽  
Short Channel ◽  
Channel Effects

Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors

2020 ◽  
Vol 67 (11) ◽  
pp. 5082-5090
Author(s):  
Jakob Pruefer ◽  
Jakob Leise ◽  
Ghader Darbandy ◽  
Aristeidis Nikolaou ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Compact Modeling ◽  
Short Channel Effects ◽  
Organic Thin Film ◽  
Short Channel ◽  
Channel Effects

THIN-FILM TRANSISTOR MODELING

1998 ◽  
Vol 09 (03) ◽  
pp. 703-723 ◽  
Author(s):  
BENJAMIN IÑIGUEZ ◽  
TOR A. FJELDLY ◽  
MICHAEL S. SHUR
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film Transistors ◽  
Short Channel Effects ◽  
Organic Thin Film ◽  
Large Area ◽  
Short Channel ◽  
Dc Characteristics ◽  
Channel Effects ◽  
Operating Regimes

We review recent physics-based, analytical DC models for amorphous silicon (a-Si), polysilicon (poly-Si), and organic thin film transistors (TFTs), developed for the design of novel ultra high-resolution, large area displays using advanced short-channel TFTs. In particular, we emphasize the modeling issues related to the main short-channel effects, such as self-heating (a-Si TFTs) and kink effect (a-Si and poly-Si TFTs), which are present in modern TFTs. The models have been proved to accurately reproduce the DC characteristics of a-Si:H with gate lengths down to 4 μm and poly-Si TFTs with gate lengths down to 2 μm. Because the scalability of the models and the use of continuous expressions for describing the characteristics in all operating regimes, the models are suitable for implementation in circuit simulators such as SPICE.

Suppression of short channel effect in organic thin film transistors

2007 ◽  
Vol 91 (11) ◽  
pp. 113508 ◽  
Author(s):  
K. Tukagoshi ◽  
F. Fujimori ◽  
T. Minari ◽  
T. Miyadera ◽  
T. Hamano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

2011 ◽  
Vol 14 (8) ◽  
pp. H333 ◽  
Author(s):  
Minseok Kim ◽  
In-Kyu You ◽  
Hyun Han ◽  
Soon-Won Jung ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Offset Printing ◽  
Short Channel
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