Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

2011 ◽  
Vol 14 (8) ◽  
pp. H333 ◽  
Author(s):  
Minseok Kim ◽  
In-Kyu You ◽  
Hyun Han ◽  
Soon-Won Jung ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Offset Printing ◽  
Short Channel

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

scholarly journals Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

AbstractThe low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f]thieno[3,2-b]thiophene (4H–21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a high saturation mobility of 8.8 cm2 V−1 s−1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 μm and an average carrier mobility of 10.5 cm2 V−1 s−1 for long channel length OTFTs (> 50 μm). The pseudo-CMOS inverter circuit with a channel length of 15 μm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 μs. The uniform and reproducible performance of 4H–21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

Impacts of Channel Length and Type of Active Layer on Electrical Properties of Organic Thin-Film Transistors: Theoretical and Experimental Investigations

2020 ◽  
Vol 15 (4) ◽  
pp. 532-551
Author(s):  
S. Wageh ◽  
W. Boukhili ◽  
Ali Veysel Tunç ◽  
N. Hamad ◽  
Ahmed Al-Ghamdi
Keyword(s):  
Thin Film ◽  
Molecular Weight ◽  
Electrical Properties ◽  
Organic Semiconductor ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Octadecyl Trichlorosilane

The organic thin film transistors made of different polymers with various channel lengths were fabricated, characterized and modeled. Three types of polymers with different polydispersity (PDI) and molecular weight were applied as active layers. Optimizing OTFTs were achieved by two technological ways, namely the treatment of SiO2 by octadecyl trichlorosilane (OTS) (self-assembled monolayers (SAM)) in correlation with channel length variation. The effect of treatment of SiO2 by OTS (octadecyl trichlorosilane) on the output and transfer characteristics along with the electrical parameters were investigated. In addition, the effects of polydispersity (PDI) and molecular weight of organic semiconductor were accounted. The characteristics of transistors depended on the exposure to SiO2 by OTS, channel length, polydispersity (PDI) and molecular weight of polymers. The devices fabricated with treatment of SiO2 by OTS along with organic semiconductor, possessing high molecular weight has a channel length of 2.5 μm, which showed outstanding mobility of 10–2 cm2V –1s–1, current ratio Ion/Ioff = 2.5 × 106 and a low contact resistance of 4.8 × 10 5 Ω. An analytical model reproduced output electrical properties having characteristics of fabricated devices. The obtained results by the model were fairly agreed with those obtained experimentally for long and short channel devices.

scholarly journals Modeling of on-off Current and Cutoff Frequency in Organic Thin Film Transistors

2020 ◽  
Vol 9 (3) ◽  
pp. 3028-3035
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Cutoff Frequency ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Model Parameters ◽  
Organic Thin Film ◽  
Short Channel

Organic thin-film transistors (OTFTs) are providing incitement in various integrated circuit applications because of advantages like low cost and being flexible. In this paper we present an analytical modeling of on-off current and cutoff frequency in organic thin film transistors. The proposed model accurately describes both the parameters uniquely and is based on the standard equations of transistor. The model parameters are listed out and simulation of the final model is performed in MATLAB. Furthermore, it has been concluded that the high cutoff frequency of OTFTs can be achieved with short channel length and high gate voltage; further high on-off current ratio can be attained by lowering semiconducting layers’ thickness and increasing the mobility

Suppression of short channel effect in organic thin film transistors

2007 ◽  
Vol 91 (11) ◽  
pp. 113508 ◽  
Author(s):  
K. Tukagoshi ◽  
F. Fujimori ◽  
T. Minari ◽  
T. Miyadera ◽  
T. Hamano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect

Organic Thin-Film-Transistors with High on/off Ratios

1995 ◽  
Vol 377 ◽  
Author(s):  
L. Torsi ◽  
A. Dodabalapur ◽  
H. E. Katz ◽  
A. J. Lovinger ◽  
R. Ruel
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Switching Time ◽  
Channel Length ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Short Channel ◽  
Active Matrix ◽  
Current Voltage ◽  
Active Matrix Displays

ABSTRACTIn this article a new procedure to obtain alpha-hexathienylene (α-6T) thin-film-transistors (TFTs) with on/off ratios in excess of one million is reported. This procedure involves subjecting the TFTs to rapid thermal annealing. Previously, high on/off ratios have been achieved with improved device design and better chemical synthesis of α-6T oligomers. High on/off ratios, along with a switching time of ∼ 10 μs, render α-6T TFTs potential candidates as switching devices in active matrix displays. The experimental current-voltage (I-V) characteristics of oc-6T TFTs with channel length L = 4μm are also presented and a measured field effect mobility of 0.02 cm2/V-s is extracted from these characteristics using an analytical model which we have developed for short-channel α-6T TFTs.

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