The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

2006 ◽  
Vol 53 (12) ◽  
pp. 2926-2931 ◽  
Author(s):  
Young Chul Choi ◽  
Milan Pophristic ◽  
Ho-Young Cha ◽  
Boris Peres ◽  
Michael G. Spencer ◽  
...  
Keyword(s):  
Si Substrate ◽  
Gan Hemts ◽  
State Breakdown

Effect of various Fe-doped AlGaN buffer layer of AlGaN/GaN HEMTs on Si substrate

2017 ◽  
Vol 35 (4) ◽  
pp. 041205 ◽  
Author(s):  
Hsien-Chin Chiu ◽  
Shang-Cyun Chen ◽  
Jiun-Wei Chiu ◽  
Bo-Hong Li ◽  
Rong Xuan ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Si Substrate ◽  
Gan Hemts ◽  
Algan Buffer

High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation

2011 ◽  
Author(s):  
C. J. Yu ◽  
C. F. Huang ◽  
P. J. Chu ◽  
K. Y. Chen ◽  
S. S. H. Hsu ◽  
...  
Keyword(s):  
High Voltage ◽  
Si Substrate ◽  
Gan Hemts
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