Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure

2006 ◽  
Vol 53 (11) ◽  
pp. 2711-2717 ◽  
Author(s):  
A. Raychowdhury ◽  
A. Keshavarzi ◽  
J. Kurtin ◽  
V. De ◽  
K. Roy
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Transistor Structure

scholarly journals High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

CARBON TUBE-BASED NANOTRANSISTORS

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Conducting Channel ◽  
Carbon Tube

В статье рассмотрены нанотранзисторы и основные свойства нанотрубок. Представлен обзор CNTFET транзисторов и основные особенности технологии их изготовления. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. Проводящий канал CNTFET представляет собой углеродную нанотрубку. The article deals with nanotransistors and the main properties of nanotubes. An overview of CNTFET transistors and the main features of their manufacturing technology is presented. Carbon nanotube field effect transistors (CNTFETs) are promising nanoscale devices for implementing high-performance circuits with very dense and low power. The CNTFET conducting channel is a carbon nanotube.

Y-Contacted High-Performance n-Type Single-Walled Carbon Nanotube Field-Effect Transistors: Scaling and Comparison with Sc-Contacted Devices

Nano Letters ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 4209-4214 ◽  
Author(s):  
Li Ding ◽  
Sheng Wang ◽  
Zhiyong Zhang ◽  
Qingsheng Zeng ◽  
Zhenxing Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

2014 ◽  
Vol 105 (6) ◽  
pp. 063101 ◽  
Author(s):  
Shibo Liang ◽  
Zhiyong Zhang ◽  
Jia Si ◽  
Donglai Zhong ◽  
Lian-Mao Peng
Keyword(s):  
Carbon Nanotube ◽  
Integrated Circuits ◽  
Yttrium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

Design of a New High-Speed and High-Performance Full Adder Cell Based on Carbon Nanotube Field Effect Transistors

2016 ◽  
Vol 5 (4) ◽  
pp. 524-528 ◽  
Author(s):  
Saeed Sam Daliri ◽  
Javad Javidan ◽  
Mahya Sam Daliri ◽  
Keivan Navi
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Full Adder

scholarly journals High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly

2006 ◽  
Vol 89 (16) ◽  
pp. 163123 ◽  
Author(s):  
Stephen A. McGill ◽  
Saleem G. Rao ◽  
Pradeep Manandhar ◽  
Peng Xiong ◽  
Seunghun Hong
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Directed Assembly ◽  
Free Carbon
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