Erratic Cell Behavior in Channel Hot Electron Programming of NOR Flash Memories

2004 ◽  
Vol 51 (10) ◽  
pp. 1613-1620
Author(s):  
M. Grossi ◽  
M. Lanzoni ◽  
B. Ricco
Keyword(s):  
Cell Behavior ◽  
Hot Electron ◽  
Flash Memories ◽  
Nor Flash

Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

2006 ◽  
Vol 50 (3) ◽  
pp. 309-315
Author(s):  
Meng-Yi Wu ◽  
Sheng-Huei Dai ◽  
Kung-Hong Lee ◽  
Shu-Fen Hu ◽  
Ya-Chin King
Keyword(s):  
Flash Memory ◽  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Band To Band Tunneling ◽  
Nor Flash

A 1.2 V Sense Amplifier for High-Performance Embeddable NOR Flash Memories

2005 ◽  
Author(s):  
D. Baderna ◽  
A. Cabrini ◽  
G. De-Sandre ◽  
F. De Santis ◽  
M. Pasotti ◽  
...  
Keyword(s):  
High Performance ◽  
Flash Memories ◽  
Sense Amplifier ◽  
Nor Flash

A Study of P/E Cycling Impaction on Drain Disturb for 65nm NOR Flash Memories by Low Frequency Noise Analyze

2014 ◽  
Vol 154 (1) ◽  
pp. 50-56
Author(s):  
Xiaonan Yang ◽  
Zongliang Huo ◽  
Zongyong Wang ◽  
Ming Liu
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Flash Memories ◽  
Nor Flash

Simulated Programming Characteristics of Stacked-Gate Flash Memories with High-k Tunnel Dielectrics

2011 ◽  
Vol 383-390 ◽  
pp. 5851-5854
Author(s):  
Yung Yu Chen
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Hot Electron ◽  
Coupling Ratio ◽  
Flash Memories ◽  
High Permittivity ◽  
Hot Electron Injection ◽  
High K ◽  
Impact Ionization Rate

Due to the reduced gate coupling ratio, the channel Fowler-Nordheim (CFN) programming speed of stacked-gate flash memories with high-permittivity (k) tunnel dielectrics (TDs) is helpless in operation voltage reduction. Although the electric field on high-k tunnel dielectrics is lower than SiO2 tunnel oxide, enhanced impact ionization rate and lower barrier height contribute to higher channel hot-electron (CHE) injection current and efficiency. Consequently, high-k TDs are only effective for the memories programmed with hot electron injection rather than FN tunneling, which is suitable for the NOR-type stacked-gate flash memories.

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