A new approach to model nonquasi-static (NQS) effects for mosfets-part II: small-signal analysis

2003 ◽  
Vol 50 (12) ◽  
pp. 2401-2407 ◽  
Author(s):  
A.S. Roy ◽  
J.M. Vasi ◽  
M.B. Patil
Keyword(s):  
Signal Analysis ◽  
Small Signal ◽  
New Approach ◽  
Small Signal Analysis

NUMERICAL ANALYSIS OF RANDOM DOPANT-INDUCED EFFECTS IN SEMICONDUCTOR DEVICES

2002 ◽  
Vol 12 (02) ◽  
pp. 551-562 ◽  
Author(s):  
I. D. MAYERGOYZ ◽  
P. ANDREI
Keyword(s):  
Signal Analysis ◽  
Perturbation Technique ◽  
Semiconductor Devices ◽  
Small Signal ◽  
New Approach ◽  
Response Characteristics ◽  
Small Signal Analysis ◽  
Threshold Voltages ◽  
Frequency Response Characteristics ◽  
Random Dopant

A new approach to the analysis of random dopant-induced effects in semiconductor devices is presented. It is based on the "small signal analysis" (perturbation) technique. This approach is computationally much more efficient than the existing purely "statistical" techniques, and it yields the information that can be directly used for the design of dopant fluctuation-resistant structures of semiconductor devices. This approach is applied to the analysis of random dopant-induced fluctuations of threshold voltages and frequency response characteristics of MOSFET devices.

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