Reply to comments on "modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels"

2002 ◽  
Vol 49 (12) ◽  
pp. 2371-2373 ◽  
Author(s):  
N. Rinaldi
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Small Signal ◽  
Bipolar Devices

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

scholarly journals Influence of minority carrier transport in the optical properties of double barrier diodes

2006 ◽  
Vol 36 (2a) ◽  
pp. 343-346 ◽  
Author(s):  
I. Camps ◽  
A. Vercik ◽  
L. F. dos Santos ◽  
Y. Galvão Gobato
Keyword(s):  
Optical Properties ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Double Barrier

scholarly journals Minority carrier transport in p-ZnO nanowires

2011 ◽  
Vol 109 (1) ◽  
pp. 016107 ◽  
Author(s):  
Y. Lin ◽  
M. Shatkhin ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
Z. Dashevsky ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Zno Nanowires

Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface

1985 ◽  
Vol 32 (4) ◽  
pp. 807-816 ◽  
Author(s):  
A. Neugroschel ◽  
M. Arienzo ◽  
Y. Komem ◽  
R.D. Isaac
Keyword(s):  
Experimental Study ◽  
Carrier Transport ◽  
Minority Carrier

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers

2019 ◽  
Vol 963 ◽  
pp. 272-275
Author(s):  
Yoshitaka Nishihara ◽  
Koji Kamei ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
Silicon Carbide ◽  
Basal Plane ◽  
Near Infrared ◽  
Minority Carrier ◽  
Pin Diode ◽  
Forward Voltage ◽  
Carrier Recombination ◽  
Near Ultraviolet ◽  
Bipolar Devices ◽  
Voltage Degradation

Suppression of the forward voltage degradation is essential in fabricating bipolar devices on silicon carbide. Using a highly N–doped 4H–epilayer as an enhancing minority carrier recombination layer is a powerful tool for reducing the expansion of BPDs converted at the epi/sub interface; however, these BPDs cannot be observed by using the near–infrared photoluminescence in the layer. Near–ultraviolet photoluminescence was instead used to detect BPDs as dark lines. In addition, a short BPD converted near the epi/sub interface and contributing to the degradation was detected. When this evaluation was applied to the fabrication of a pin diode including a highly N–doped 4H–epilayer, the Vf shift was suppressed in comparison with that in a diode without the layer.

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