scholarly journals Characteristics of pulsed plasma doping sources for ultrashallow junction formation

2007 ◽  
Vol 101 (6) ◽  
pp. 063305 ◽  
Author(s):  
Ankur Agarwal ◽  
Mark J. Kushner
Keyword(s):  
Pulsed Plasma ◽  
Plasma Doping ◽  
Junction Formation ◽  
Ultrashallow Junction

Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices

2005 ◽  
Vol 44 (4B) ◽  
pp. 2376-2379 ◽  
Author(s):  
Kiju Im ◽  
Won-ju Cho ◽  
Chang-Geun Ahn ◽  
Jong-Heon Yang ◽  
In-Bok Baek ◽  
...  
Keyword(s):  
Mos Devices ◽  
Plasma Doping ◽  
Junction Formation ◽  
Ultrashallow Junction

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

Study of pulsed plasma doping by Langmuir probe and ion mass-energy analyzer

2002 ◽  
Author(s):  
Ziwei Fang Ziwei Fang ◽  
Bon-Woong Koo Bon-Woong Koo ◽  
S. Felch ◽  
Yu Lei Yu Lei ◽  
L.J. Overzet ◽  
...  
Keyword(s):  
Langmuir Probe ◽  
Pulsed Plasma ◽  
Energy Analyzer ◽  
Mass Energy ◽  
Plasma Doping

Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

2008 ◽  
Vol 1070 ◽  
Author(s):  
Seung-woo Do ◽  
Byung-Ho Song ◽  
Ho Jung ◽  
Seong-Ho Kong ◽  
Jae-Geun Oh ◽  
...  
Keyword(s):  
Free Surface ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Room Temperature ◽  
Doping Concentration ◽  
Junction Depth ◽  
Surface Doping ◽  
Plasma Doping ◽  
Junction Formation ◽  
Doping Profiles

ABSTRACTPlasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.

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