Characterization of hard- and soft-switching performance of high-voltage Si and 4H-SiC PiN diodes

2002 ◽  
Vol 49 (9) ◽  
pp. 1648-1656 ◽  
Author(s):  
K. Shenai ◽  
M. Trivedi ◽  
P.G. Neudeck
Keyword(s):  
High Voltage ◽  
Soft Switching ◽  
Pin Diodes ◽  
Switching Performance

Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H–SiC PiN diodes

2015 ◽  
Vol 88 ◽  
pp. 167-173 ◽  
Author(s):  
Xiaochuan Deng ◽  
Han Xiao ◽  
Jia Wu ◽  
Huajun Shen ◽  
Chengzhan Li ◽  
...  
Keyword(s):  
High Voltage ◽  
Pin Diodes ◽  
Fabrication And Characterization

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

2007 ◽  
pp. 921-924
Author(s):  
Pavel A. Ivanov ◽  
Michael E. Levinshtein ◽  
Mykola S. Boltovets ◽  
Valentyn A. Krivutsa ◽  
John Palmour ◽  
...  
Keyword(s):  
High Voltage ◽  
Basal Plane ◽  
Electrical Characterization ◽  
Pin Diodes

Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C

2012 ◽  
Vol 717-720 ◽  
pp. 957-960 ◽  
Author(s):  
Karl Otto Dohnke ◽  
Dethard Peters ◽  
Reinhold Schörner
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Switching Behavior ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Lateral Contact ◽  
Power Cycling ◽  
Chip Size ◽  
Ultrafast Switching

Silicon Carbide bipolar diodes offer unique ultrafast switching behavior for high voltage and high power applications [1]. But due to the small chip size it is required to parallel a lot of dice and therefore it is necessary to get detailed information about the electrical and thermal behavior of single diodes. For the characterization in the full current and voltage regime we have developed a molded leadframe package. The package was designed with a lateral contact geometry and a high creepage distance of 20 mm, which enable us to characterize these diodes for high voltage applications. Forward and reverse I-V characteristics and turn-off behavior under hard switching conditions up to 300 °C are reported. Additionally the forward voltage stability and power cycling tests are discussed.

Electrical characterization of diamond PiN diodes for high voltage applications

2013 ◽  
Vol 210 (10) ◽  
pp. 2035-2039 ◽  
Author(s):  
Mariko Suzuki ◽  
Tadashi Sakai ◽  
Toshiharu Makino ◽  
Hiromitsu Kato ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Characterization ◽  
Pin Diodes

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

2009 ◽  
Vol 615-617 ◽  
pp. 695-698 ◽  
Author(s):  
Sombel Diaham ◽  
Marie Laure Locatelli ◽  
Thierry Lebey ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
...  
Keyword(s):  
Thick Film ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Electrical Characterization ◽  
Dielectric Strength ◽  
Pin Diode ◽  
Film Properties ◽  
Pin Diodes ◽  
Maximum Value

A polyimide (PI) has been used for the passivation of maximum 7.8 kV 4H-SiC P+N–N+ (PiN) diodes with a 60 µm-thick base epilayer and a junction termination extension (JTE) periphery protection. The dielectric strength of PI films is studied versus area and temperature. The reverse electrical characterization of the PI–passivated PiN diodes is presented for different natures of the environmental atmosphere. The results are compared to those obtained from same devices passivated with a deposited SiO2 thick film. The highest experimental breakdown voltages are obtained for PI–passivated PiN diodes immersed in PFPE oil, with a 5-6 kV typical value, and a 7.3 kV maximum value. Experimental observations are discussed in correlation with the insulating film properties.

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