Electrical characterization of diamond PiN diodes for high voltage applications

2013 ◽  
Vol 210 (10) ◽  
pp. 2035-2039 ◽  
Author(s):  
Mariko Suzuki ◽  
Tadashi Sakai ◽  
Toshiharu Makino ◽  
Hiromitsu Kato ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Characterization ◽  
Pin Diodes

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

2007 ◽  
pp. 921-924
Author(s):  
Pavel A. Ivanov ◽  
Michael E. Levinshtein ◽  
Mykola S. Boltovets ◽  
Valentyn A. Krivutsa ◽  
John Palmour ◽  
...  
Keyword(s):  
High Voltage ◽  
Basal Plane ◽  
Electrical Characterization ◽  
Pin Diodes

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

2009 ◽  
Vol 615-617 ◽  
pp. 695-698 ◽  
Author(s):  
Sombel Diaham ◽  
Marie Laure Locatelli ◽  
Thierry Lebey ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
...  
Keyword(s):  
Thick Film ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Electrical Characterization ◽  
Dielectric Strength ◽  
Pin Diode ◽  
Film Properties ◽  
Pin Diodes ◽  
Maximum Value

A polyimide (PI) has been used for the passivation of maximum 7.8 kV 4H-SiC P+N–N+ (PiN) diodes with a 60 µm-thick base epilayer and a junction termination extension (JTE) periphery protection. The dielectric strength of PI films is studied versus area and temperature. The reverse electrical characterization of the PI–passivated PiN diodes is presented for different natures of the environmental atmosphere. The results are compared to those obtained from same devices passivated with a deposited SiO2 thick film. The highest experimental breakdown voltages are obtained for PI–passivated PiN diodes immersed in PFPE oil, with a 5-6 kV typical value, and a 7.3 kV maximum value. Experimental observations are discussed in correlation with the insulating film properties.

scholarly journals A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

2005 ◽  
Vol 483-485 ◽  
pp. 1005-1008
Author(s):  
Pierre Brosselard ◽  
Thierry Bouchet ◽  
Dominique Planson ◽  
Sigo Scharnholz ◽  
Gontran Pâques ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Electrical Characterization ◽  
Electrical Strength ◽  
Oxide Charge ◽  
Blocking Voltage ◽  
Simulation Based ◽  
Device Structures ◽  
Silicon Silicon

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

Electrical Characterization of High Voltage Polymer Tantalum Capacitors

2012 ◽  
Vol 159 (10) ◽  
pp. A1646-A1651 ◽  
Author(s):  
Y. Freeman ◽  
G. F. Alapatt ◽  
W. R. Harrell ◽  
P. Lessner
Keyword(s):  
High Voltage ◽  
Electrical Characterization

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

2002 ◽  
Vol 389-393 ◽  
pp. 1285-1288 ◽  
Author(s):  
Uwe Zimmermann ◽  
John Österman ◽  
Jie Zhang ◽  
Anne Henry ◽  
Anders Hallén
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Electrical Characterization ◽  
Epitaxial Layers

scholarly journals A Complex Permittivity Based Sensor for the Electrical Characterization of High-Voltage Transformer Oils

Sensors ◽  
2005 ◽  
Vol 5 (4) ◽  
pp. 302-316 ◽  
Author(s):  
Constantine Dervos ◽  
Christos Paraskevas ◽  
Panayotis Skafidas ◽  
Panayota Vassiliou
Keyword(s):  
High Voltage ◽  
Complex Permittivity ◽  
Electrical Characterization ◽  
Voltage Transformer ◽  
High Voltage Transformer ◽  
Transformer Oils

scholarly journals Electrical Characterization of a New Crosslinked Copolymer Blend for DC Cable Insulation

Energies ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1434 ◽  
Author(s):  
Sarath Kumara ◽  
Xiangdong Xu ◽  
Thomas Hammarström ◽  
Yingwei Ouyang ◽  
Amir Masoud Pourrahimi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electric Field ◽  
Surface Potential ◽  
High Voltage ◽  
Direct Current ◽  
Electrical Characterization ◽  
Copolymer Blend ◽  
New Material ◽  
Potential Decay

To design reliable high voltage cables, clean materials with superior insulating properties capable of operating at high electric field levels at elevated temperatures are required. This study aims at the electrical characterization of a byproduct-free crosslinked copolymer blend, which is seen as a promising alternative to conventional peroxide crosslinked polyethylene currently used for high voltage direct current cable insulation. The characterization entails direct current (DC) conductivity, dielectric response and surface potential decay measurements at different temperatures and electric field levels. In order to quantify the insulating performance of the new material, the electrical properties of the copolymer blend are compared with those of two reference materials; i.e., low-density polyethylene (LDPE) and peroxide crosslinked polyethylene (XLPE). It is found that, for electric fields of 10–50 kV/mm and temperatures varying from 30 °C to 70 °C, the DC conductivity of the copolymer blend is in the range of 10−17–10−13 S/m, which is close to the conductivity of crosslinked polyethylene. Furthermore, the loss tangent of the copolymer blend is about three to four times lower than that of crosslinked polyethylene and its magnitude is on the level of 0.01 at 50 °C and 0.12 at 70 °C (measured at 0.1 mHz and 6.66 kV/mm). The apparent conductivity and trap density distributions deduced from surface potential decay measurements also confirmed that the new material has electrical properties at least as good as currently used insulation materials based on XLPE (not byproduct-free). Thus, the proposed byproduct-free crosslinked copolymer blend has a high potential as a prospective insulation medium for extruded high voltage DC cables.

Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

2015 ◽  
Vol 111 ◽  
pp. 12-17 ◽  
Author(s):  
Andrzej Taube ◽  
Jakub Kaczmarski ◽  
Renata Kruszka ◽  
Jakub Grochowski ◽  
Kamil Kosiel ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Gan On Si

Fabrication and electrical characterization of High-Voltage silicon JFETs

2019 ◽  
Vol 14 (05) ◽  
pp. P05007-P05007 ◽  
Author(s):  
G. Giacomini ◽  
W. Chen ◽  
D. Lynn
Keyword(s):  
High Voltage ◽  
Electrical Characterization
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