Two-dimensional self-consistent simulation of a triangular p-channel SOI nano-flash memory device

2002 ◽  
Vol 49 (8) ◽  
pp. 1420-1426 ◽  
Author(s):  
Xiaohui Tang ◽  
X. Baie ◽  
J.-P. Colinge ◽  
C. Gustin ◽  
V. Bayot
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Two Dimensional ◽  
Self Consistent

SELF-CONSISTENT SIMULATION OF QUANTUM DOT FLASH MEMORY DEVICE WITH SiO2 AND HfO2 DIELECTRICS

2005 ◽  
Vol 04 (02) ◽  
pp. 171-178
Author(s):  
CHEE CHING CHONG ◽  
KAI HONG ZHOU ◽  
PING BAI ◽  
ER PING LI ◽  
GANESH S. SAMUDRA
Keyword(s):  
Quantum Dot ◽  
Flash Memory ◽  
Gate Dielectric ◽  
Tunneling Current ◽  
Memory Device ◽  
Device Structure ◽  
Dielectric Thickness ◽  
Silicon Quantum Dot ◽  
High K ◽  
Self Consistent

Flash memory structure in which a silicon quantum dot embedded in the gate dielectric region between the channel and the control gate is considered. A self-consistent simulation for such memory devices is performed and aims to understand the relationship between the device structure and the meaningful quantities, as required for an efficient device operation. In this study, both the traditional SiO2 and HfO2 high-k dielectrics are being explored, and their results are compared and contrasted. In particular, the superiority of HfO2 over the SiO2 is demonstrated through various interlocking investigations on the relationships between the tunneling current, dielectric thickness, barrier height, programming and retention times.

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

2012 ◽  
Vol 33 (9) ◽  
pp. 1264-1266 ◽  
Author(s):  
Li-Jung Liu ◽  
Kuei-Shu Chang-Liao ◽  
Yi-Chuen Jian ◽  
Jen-Wei Cheng ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Buried Channel

Study for aluminum metal patterning process with oxide hard mask in 90-nm s-flash memory device fabrication

2008 ◽  
Author(s):  
Sang Il Hwang ◽  
Ki Jun Yun ◽  
Sang Wook Ryu ◽  
Kang Hyun Lee ◽  
Jae Won Han
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Device Fabrication ◽  
Hard Mask ◽  
Aluminum Metal

CESIUM-INDUCED QUANTIZED 2D ELECTRON CHANNEL ON THE InAs(110) SURFACE

1995 ◽  
Vol 02 (06) ◽  
pp. 723-729 ◽  
Author(s):  
V. YU. ARISTOV ◽  
G. LE LAY ◽  
M. GREHK ◽  
V.M. ZHILIN ◽  
A. TALEB-IBRAHIMI ◽  
...  
Keyword(s):  
Electron Emission ◽  
Electronic States ◽  
Photoemission Spectroscopy ◽  
Spectral Features ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Discrete Energy ◽  
Electron Channel ◽  
Self Consistent ◽  
Electron Photoemission

We present the first clear evidence of electron emission arising directly from a quantized two-dimensional electron channel from the InAs (110) surface covered by a few Cs atoms (≈ 0.01 Cs ML). Spectral features observed by photoemission spectroscopy using synchrotron radiation reveal discrete-energy electronic states resulting from quantization in the direction normal to the surface. The electron photoemission originates from the vicinities of [Formula: see text] points in the first and second surface Brillouin zones corresponding to the bottom of the conduction band. These findings are in agreement with self-consistent theoretical energy-level calculations using a jellium-like model.

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