Reducing Post-Trim Drift of Thin-Film Resistors by Optimizing YAG Laser Output Characteristics

1978 ◽  
Vol 1 (4) ◽  
pp. 392-397 ◽  
Author(s):  
R. Dow ◽  
M. Mauck ◽  
T. Richardson ◽  
E. Swenson
Keyword(s):  
Thin Film ◽  
Laser Output ◽  
Yag Laser ◽  
Thin Film Resistors ◽  
Output Characteristics

scholarly journals Current Noise in Thick and Thin Film Resistors

1983 ◽  
Vol 10 (2-3) ◽  
pp. 81-85 ◽  
Author(s):  
S. Demolder ◽  
A. Van Calster ◽  
M. Vandendriessche
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Measured Data ◽  
Measuring Circuit ◽  
Current Noise ◽  
High Quality ◽  
Thin Film Resistors

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.

scholarly journals Influence of Thermal Annealing on the Electrical Properties of Poly(3-hexylthiophene)-Based Thin Film Diodes

2007 ◽  
Vol 62 (10-11) ◽  
pp. 609-619 ◽  
Author(s):  
Zivayi Chiguvare ◽  
Jürgen Parisi ◽  
Vladimir Dyakonov
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Polymer Chains ◽  
Hole Injection ◽  
Before And After ◽  
Output Characteristics ◽  
Al Thin Film ◽  
Poly Styrene Sulfonate

The effects of thermal annealing on the bulk transport properties of poly(3-hexylthiophene) (P3HT) were studied by analyzing room temperature current-voltage characteristics of polymer thin films sandwiched between indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS) and aluminum electrodes, before and after a thermal annealing step. It was observed that annealing takes place in two steps: (1) Dedoping of the polymer of impurities such as oxygen, remnant solvent, water, leading to a decrease in the conductivity of the film, and (2) thermally induced motion of the polymer chains leading to closer packing, thus, stronger inter-chain interaction and, consequently, increase in conductivity. It was also observed that the ITO/PEDOT:PSS/P3HT hole injection barrier increases on annealing the ITO/PEDOT:PSS/P3HT/Al thin film devices. The implications of impurity dedoping and closer packing on the output characteristics of bulk heterojunction polymer-fullerene thin film solar cells are discussed.

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