Study of Thermal Aging Effects on Intermetallic Growth Mechanisms and Shear Strength Behavior of Wafer-Level Solder Bumps

2009 ◽  
Vol 32 (2) ◽  
pp. 405-414 ◽  
Author(s):  
J. Amistoso ◽  
A.V. Amorsolo
2009 ◽  
Vol 131 (4) ◽  
Author(s):  
Jose Omar S. Amistoso ◽  
Alberto V. Amorsolo

Cold bump pull tests performed on wafer level chip scale packages using SAC105 solder bumps show an increase in the occurrence of brittle failure modes with aging temperature and time. Fast intermetallic growth at 0–1000 h can be attributed to (Cu,Ni)6Sn5, while the decrease in intermetallic growth rate at t>1000 h can be attributed to diffusion processes leading to (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 formation and growth. Ni diffuses toward the solder bulk and saturates at 175–200°C, while Cu diffuses from the under bump metallization (UBM) toward the solder bump at 125–150°C. Interactions between Cu and Ni atoms lead to saturation of their atomic % gradients due to intermetallic formation. Sn diffusion from the solder toward the UBM occurs at 125–150°C. The activation energy for total intermetallic growth was calculated at 0.2 eV.


2015 ◽  
Vol 10 (1) ◽  
pp. 31-38
Author(s):  
Ildikó Buocz ◽  
Nikoletta Rozgonyi-Boissinot ◽  
Ákos Török

2007 ◽  
Vol 46 (9) ◽  
pp. 2735-2740 ◽  
Author(s):  
Do Heui Kim ◽  
Ya-Huei Chin ◽  
George Muntean ◽  
Aleksey Yezerets ◽  
Neal Currier ◽  
...  

2002 ◽  
Vol 729 ◽  
Author(s):  
Lauren E. S. Rohwer ◽  
Andrew D. Oliver ◽  
Melissa V. Collins

AbstractA wafer level packaging technique that involves anodic bonding of Pyrex wafers to released surface micromachined wafers is demonstrated. Besides providing a hermetic seal, this technique allows full wafer release, provides protection during die separation, and offers the possibility of integration with optoelectronic devices. Anodic bonding was performed under applied voltages up to 1000 V, and temperatures ranging from 280 to 400°C under vacuum (10-4Torr). The quality of the bonded interfaces was evaluated using shear strength testing and leak testing. The shear strength of Pyrex-to-polysilicon and aluminum bonds was ∼10-15 MPa. The functionality of surface micromachined polysilicon devices was tested before and after anodic bonding. 100% of thermal actuators, 94% of torsional ratcheting actuators, and 70% of microengines functioned after bonding. The 70% yield was calculated from a test sample of 25 devices.


2013 ◽  
Vol 7 (1) ◽  
pp. 1-9 ◽  
Author(s):  
F A M Marinho ◽  
O M Oliveira ◽  
H Adem ◽  
S Vanapalli

Author(s):  
Pradeep Lall ◽  
Vikas Yadav ◽  
Jeff Suhling ◽  
David Locker

Electronics in automotive underhood and downhole drilling applications may be subjected to sustained operation at high temperature in addition to high strain-rate loads. SAC solders used for second level interconnects have been shown to experience degradation in high strain-rate mechanical properties under sustained exposure to high temperatures. Industry search for solutions for resisting the high-temperature degradation of SAC solders has focused on the addition of dopants to the alloy. In this study, a doped SAC solder called SAC-Q solder have been studied. The high strain rate mechanical properties of SAC-Q solder have been studied under elevated temperatures up to 200°C. Samples with thermal aging at 50°C for up to 6-months have been used for measurements in uniaxial tensile tests. Measurements for SAC-Q have been compared to SAC105 and SAC305 for identical test conditions and sample geometry. Data from the SAC-Q measurements has been fit to the Anand Viscoplasticity model. In order to assess the predictive power of the model, the computed Anand parameters have been used to simulate the uniaxial tensile test and the model predictions compared with experimental data. Model predictions show good correlation with experimental measurements. The presented approach extends the Anand Model to include thermal aging effects.


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