Using Multilevel Phase Change Memory to Build Data Storage: A Time-Aware System Design Perspective

2013 ◽  
Vol 62 (10) ◽  
pp. 2083-2095 ◽  
Author(s):  
Qi Wu ◽  
Fei Sun ◽  
Wei Xu ◽  
Tong Zhang
Keyword(s):  
Phase Change ◽  
System Design ◽  
Data Storage ◽  
Phase Change Memory ◽  
Design Perspective ◽  
Time Aware ◽  
Change Memory

scholarly journals Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2082
Author(s):  
Mario Behrens ◽  
Andriy Lotnyk ◽  
Hagen Bryja ◽  
Jürgen W. Gerlach ◽  
Bernd Rauschenbach
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Phase Change ◽  
Data Storage ◽  
Structural Changes ◽  
Phase Change Memory ◽  
Phase Changes ◽  
Uv Laser ◽  
Optical Pulses ◽  
Change Memory

Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

Polyamorphism in K2Sb8Se13 for multi-level phase-change memory

2020 ◽  
Vol 8 (19) ◽  
pp. 6364-6369 ◽  
Author(s):  
Meng Xu ◽  
Chong Qiao ◽  
Kan-Hao Xue ◽  
Hao Tong ◽  
Xiaomin Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Phase Change Memory ◽  
State Data ◽  
Amorphous Phases ◽  
Multi Level ◽  
Change Material ◽  
Change Memory

A novel phase-change material K2Sb8Se13 with two amorphous phases was thoroughly investigated for multi-state data storage.

scholarly journals An Improved Electrical Switching and Phase-Transition Model for Scanning Probe Phase-Change Memory

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Lei Wang ◽  
Si-Di Gong ◽  
Jing Wen ◽  
Ci Hui Yang
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Data Storage ◽  
Writing Process ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Scanning Probe ◽  
Three Dimensional Model ◽  
Current Voltage Curve ◽  
Change Memory

Scanning probe phase-change memory (SPPCM) has been widely considered as one of the most promising candidates for next-generation data storage devices due to its fast switching time, low power consumption, and potential for ultra-high density. Development of a comprehensive model able to accurately describe all the physical processes involved in SPPCM operations is therefore vital to provide researchers with an effective route for device optimization. In this paper, we introduce a pseudo-three-dimensional model to simulate the electrothermal and phase-transition phenomena observed during the SPPCM writing process by simultaneously solving Laplace’s equation to model the electrical process, the classical heat transfer equation, and a rate equation to model phase transitions. The crystalline bit region of a typical probe system and the resulting current-voltage curve obtained from simulations of the writing process showed good agreement with experimental results obtained under an equivalent configuration, demonstrating the validity of the proposed model.

Multi-State Data Storage of Ge2Sb2Te5∕Ga30Sb70 Multilayer Films for Phase Change Memory

2012 ◽  
Vol 15 (4) ◽  
pp. H115 ◽  
Author(s):  
Mingcheng Sun ◽  
Bo Shen ◽  
Changzhou Wang ◽  
Sannian Song ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Memory ◽  
Multilayer Films ◽  
State Data ◽  
Change Memory

Implementation of time-aware sensing technique for multilevel phase change memory cell

2016 ◽  
Vol 56 ◽  
pp. 74-80 ◽  
Author(s):  
Nemat H. El-Hassan ◽  
T. Nandha Kumar ◽  
Haider Abbas F. Almurib
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Time Aware ◽  
Change Memory

scholarly journals Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kiumars Aryana ◽  
John T. Gaskins ◽  
Joyeeta Nag ◽  
Derek A. Stewart ◽  
Zhaoqiang Bai ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Phase Change ◽  
Data Storage ◽  
Phase Change Memory ◽  
Interfacial Thermal Resistance ◽  
Thermal Excitation ◽  
Interfacial Resistance ◽  
New Paradigm ◽  
Adjacent Layer ◽  
Change Memory

AbstractPhase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding PCM thermal properties at length scales close to the memory cell dimensions. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in interfacial thermal resistance as GST transitions from cubic to hexagonal crystal structure, resulting in a factor of 4 reduction in the effective thermal conductivity. Simulations reveal that interfacial resistance between PCM and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~ 40% and ~ 50%, respectively. These thermal insights present a new opportunity to reduce power and operating currents in PCMs.

Phase-Change Memory and Optical Data Storage

2019 ◽  
pp. 1495-1520
Author(s):  
Xiang Shen ◽  
Yimin Chen ◽  
Guoxiang Wang ◽  
Yegang Lv
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Memory ◽  
Optical Data Storage ◽  
Optical Data ◽  
Change Memory
Sign in / Sign up

Export Citation Format

Share Document