Growth and Pinning Properties of Superconducting Nanostructured $\hbox{FeSe}_{0.5}\hbox{Te}_{0.5}$ Thin Films on Amorphous Substrates

2013 ◽  
Vol 23 (3) ◽  
pp. 7500904-7500904 ◽  
Author(s):  
Li Chen ◽  
Chen-Fong Tsai ◽  
Aiping Chen ◽  
Qing Su ◽  
Haiyan Wang
2019 ◽  
Vol 672 ◽  
pp. 138-145 ◽  
Author(s):  
E. Flores ◽  
S. Yoda ◽  
C. Morales ◽  
O. Caballero-Calero ◽  
P. Díaz-Chao ◽  
...  

2019 ◽  
Vol 29 (5) ◽  
pp. 1-5 ◽  
Author(s):  
Antonio Leo ◽  
Giulia Sylva ◽  
Valeria Braccini ◽  
Emilio Bellingeri ◽  
Alberto Martinelli ◽  
...  

2013 ◽  
Vol 62 (12) ◽  
pp. 1819-1822
Author(s):  
D. H. Tran ◽  
W. B. K. Putri ◽  
J. S. Chung ◽  
B. Kang ◽  
N. H. Lee ◽  
...  

1993 ◽  
Vol 204 (3-4) ◽  
pp. 305-314 ◽  
Author(s):  
Terukazu Nishizaki ◽  
Fusao Ichikawa ◽  
Takeshi Fukami ◽  
Takafumi Aomine ◽  
Takahito Terashima ◽  
...  

1999 ◽  
Vol 9 (2) ◽  
pp. 1669-1672 ◽  
Author(s):  
S. Hontsu ◽  
M. Nakamori ◽  
A. Fujimaki ◽  
H. Tabata ◽  
J. Ishii ◽  
...  

1995 ◽  
Vol 415 ◽  
Author(s):  
G. Doubinina ◽  
G. T. Stauf

ABSTRACTThe possibility of growing crystallographically aligned films of good quality on polycrystalline or amorphous substrates is of great interest, both for fundamental understanding of film growth mechanisms, and for potential applications such as buffer layers for silicon-on-insulator devices and an epitaxial transition layer for cuprate superconductor thin films grown on substrates with large misfits. Deposition conditions for yttria-stabilized zirconia (YSZ) thin films were investigated and optimized, and highly (001) oriented YSZ films were reproducibly prepared on amorphous substrates by MOCVD. We believe that the formation of a highly oriented crystalline film on an amorphous substrate can be interpreted in terms of the inherent features of MOCVD process, and a working model of this process is suggested.


2008 ◽  
Vol 468 (15-20) ◽  
pp. 1635-1637 ◽  
Author(s):  
T. Fujiyoshi ◽  
M. Haruta ◽  
T. Sueyoshi ◽  
K. Yonekura ◽  
M. Watanabe ◽  
...  

1981 ◽  
Vol 16 (1) ◽  
pp. 11-14 ◽  
Author(s):  
N. Romeo ◽  
V. Canevari ◽  
G. Sberveglieri ◽  
A. Tosi ◽  
A. Camanzi

Sign in / Sign up

Export Citation Format

Share Document