Numerical Study of Gold Wire Bonding Process on Cu/Low-k Structures

2007 ◽  
Vol 30 (3) ◽  
pp. 448-456 ◽  
Author(s):  
Akella G. K. Viswanath ◽  
Xiaowu Zhang ◽  
V. P. Ganesh ◽  
Lu Chun
Keyword(s):  
Numerical Study ◽  
Gold Wire ◽  
Wire Bonding ◽  
Bonding Process ◽  
Low K

Wire-bonding process development for low-k materials

2005 ◽  
Vol 81 (1) ◽  
pp. 75-82 ◽  
Author(s):  
Jonathan Tan ◽  
Zhao Wei Zhong ◽  
Hong Meng Ho
Keyword(s):  
Process Development ◽  
Wire Bonding ◽  
Bonding Process ◽  
Low K

To Study the High Temperature Effects on Ball Bonds Using Low K Material in Wire Bond Devices

2007 ◽  
Author(s):  
S. A. Kudtarkar ◽  
R. Murcko ◽  
K. Srihari ◽  
S. Saiyed
Keyword(s):  
High Temperature ◽  
Mechanical Stability ◽  
Semiconductor Industry ◽  
Gold Wire ◽  
Wire Bonding ◽  
Mechanical Stresses ◽  
Wire Bond ◽  
Ball Bonds ◽  
Bond Pads ◽  
Low K

Wire bonding is widely used as one of the main interconnect alternatives. This technique applies significant mechanical stresses on the bond pads along with heat and ultrasonic energy to form a bond. An interconnection of copper plus low k material has been a focus of the semiconductor industry with the goal of reducing interconnection delays. The material is below the wire bond pads and complicates the mechanical stability of the device during wire bonding. The low k materials that are suggested are very sensitive to these mechanical stresses. This generates a significant reliability concern for the underlying metal structures. In addition, the integrity of the bond formed may be negatively impacted from a reliability perspective because of the softer material properties of the dielectric. This research explores the ball bond integrity for die with SiO2 and low k dielectric underlying material respectively, using 0.8 mil thick (20 microns) gold wire. Accelerated tests, such as high temperature storage at 150°C and 175°C, were conducted to assess the reliability of these bonds. The results of this investigation reveal that the ball bond’s strength degrades after high temperature tests due to the occurrence of Kirkendall voids between the gold wire and the aluminum bond pad. The degradation recorded was more severe for regular die than its low k counterpart.

Recrystallization of Ag and Ag-La Alloy Wire in Wire Bonding Process

2013 ◽  
Vol 804 ◽  
pp. 151-157 ◽  
Author(s):  
Hao Wen Hsueh ◽  
Fei Yi Hung ◽  
Truan Sheng Lui
Keyword(s):  
Mechanical Properties ◽  
Gold Wire ◽  
Wire Bonding ◽  
Bonding Process ◽  
Silver Wire ◽  
The Novel ◽  
Alloy Wire ◽  
Free Air ◽  
Before And After ◽  
Novel Material

Sliver wire was the novel material to replaced gold wire in wire bonding process, and rare earth element was often added to improve the properties of silver wires. The annealing effect (at 225°C~275°C for 30min) on the tensile mechanical properties of silver wires with φ=20μm was investigated. In addition, the microstructural characteristics and the mechanical properties before and after an electric flame-off (EFO) process were also studied. Free-air ball (FAB) of 85μm diameter from 20μm diameter pure silver wire was too huge for bonding process, otherwise the silver wire was added 0.05 wt.% lanthanum to form Ag-La alloy wire to reduce the diameter of FAB. FAB of Ag-La alloy wire with a 55μm diameter, and can avoid short-circuited. In addition, microstructures, tensile properties and the micro-hardness of Ag-La alloy wires indicated that the best annealing temperature was 425 °C.

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