Channel length-dependent series resistance?

2012 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2012.6243299 ◽

2012 ◽

Cited By ~ 3

Author(s):

J.P. Campbell ◽

K.P. Cheung ◽

S.A. Drozdov ◽

R.G. Southwick ◽

J.T. Ryan ◽

...

Keyword(s):

Series Resistance ◽

Channel Length ◽

Dependent Series

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A new method for extracting the channel-length reduction and the gate-voltage-dependent series resistance of counter-implanted p-MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.644635 ◽

1997 ◽

Vol 44 (12) ◽

pp. 2193-2199 ◽

Cited By ~ 4

Author(s):

Chien-Min Wu ◽

Ching-Yuan Wu

Keyword(s):

Gate Voltage ◽

Series Resistance ◽

Channel Length ◽

New Method ◽

Voltage Dependent ◽

Dependent Series ◽

Length Reduction

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Determination of the gate-voltage dependent series resistance and channel length in sub micron LDD-MOSFETs

Microelectronic Engineering ◽

10.1016/0167-9317(91)90283-j ◽

1991 ◽

Vol 15 (1-4) ◽

pp. 555-558 ◽

Cited By ~ 4

Author(s):

J.A.M. Otten ◽

F.M. Klaassen

Keyword(s):

Gate Voltage ◽

Series Resistance ◽

Channel Length ◽

Voltage Dependent ◽

Dependent Series

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New approach for the extraction of gate voltage dependent series resistance and channel length reduction in CMOS transistors

1997 IEEE International Conference on Microelectronic Test Structures Proceedings ◽

10.1109/icmts.1997.589391 ◽

2002 ◽

Cited By ~ 10

Author(s):

H. Brut ◽

A. Juge ◽

G. Ghibaudo

Keyword(s):

Gate Voltage ◽

Series Resistance ◽

Channel Length ◽

New Approach ◽

Cmos Transistors ◽

Voltage Dependent ◽

Dependent Series ◽

Length Reduction

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On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

Microelectronic Engineering ◽

10.1016/j.mee.2005.12.013 ◽

2006 ◽

Vol 83 (3) ◽

pp. 577-581 ◽

Cited By ~ 62

Author(s):

M.M. Bülbül ◽

S. Zeyrek ◽

Ş. Altındal ◽

H. Yüzer

Keyword(s):

Series Resistance ◽

Schottky Diodes ◽

Temperature Dependent ◽

Dependent Series

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Illumination-Dependent Series Resistance in Perovskite Solar Cells Revealed by Jsc-Voc Measurements

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547465 ◽

2018 ◽

Author(s):

Noemi Mundhaas ◽

Zhengshan J. Yu ◽

Kevin A. Bush ◽

Hsin-Ping Wang ◽

Michael McGehee ◽

...

Keyword(s):

Solar Cells ◽

Series Resistance ◽

Perovskite Solar Cells ◽

Dependent Series

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A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Cited By ~ 5

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

New Method ◽

Effective Channel

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Front Side Metallization of n- and p-Type, High-Efficiency, Single-Crystalline Si Solar Cells: Assessing the Temperature-Dependent Series Resistance

Journal of Electronic Materials ◽

10.1007/s11664-016-4459-8 ◽

2016 ◽

Vol 45 (6) ◽

pp. 2656-2661 ◽

Cited By ~ 3

Author(s):

Benjamin Willsch ◽

Praveen Kumar ◽

Oliver Eibl

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Series Resistance ◽

Front Side ◽

Temperature Dependent ◽

Single Crystalline ◽

Si Solar Cells ◽

Dependent Series ◽

P Type

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A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(00)00054-x ◽

2000 ◽

Vol 44 (7) ◽

pp. 1187-1189 ◽

Cited By ~ 2

Author(s):

Guofu Niu ◽

Suraj J Mathew ◽

John D Cressler ◽

Seshu Subbanna

Keyword(s):

Series Resistance ◽

Channel Length ◽

Resistance Ratio ◽

Ratio Method ◽

Channel Resistance ◽

Effective Channel

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A simple method for effective channel length, series resistance and mobility extraction in deep-submicron MOSFETs

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436665 ◽

2005 ◽

Author(s):

Chun-li Yu ◽

Yue Hao ◽

Lin-an Yang

Keyword(s):

Series Resistance ◽

Channel Length ◽

Deep Submicron ◽

Simple Method ◽

Effective Channel

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Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

Active and Passive Electronic Components ◽

10.1155/2015/460416 ◽

2015 ◽

Vol 2015 ◽

pp. 1-9 ◽

Cited By ~ 4

Author(s):

A. Ciprut ◽

A. Chelly ◽

A. Karsenty

Keyword(s):

Gate Voltage ◽

Series Resistance ◽

Mobility Models ◽

Soi Mosfet ◽

Semiempirical Approach ◽

Voltage Dependent ◽

Channel Thickness ◽

Dependent Series ◽

Tcad Simulation ◽

Or Gate

TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the sameW/Lratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.). The experimental transferI-Vcharacteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (RSD). TCAD tools do not usually considerRSDto be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.

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