Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation

2005 ◽  
Author(s):  
S. Potbhare ◽  
N. Goldsman ◽  
G. Pennington ◽  
J.M. McGarrity ◽  
A. Lelis
Keyword(s):  
Charge Density ◽  
First Principles ◽  
Device Simulation ◽  
Mobility Model ◽  
Interface Trap ◽  
Coulomb Scattering ◽  
Trap Charge

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

2006 ◽  
Vol 527-529 ◽  
pp. 1321-1324 ◽  
Author(s):  
Siddharth Potbhare ◽  
Gary Pennington ◽  
Neil Goldsman ◽  
Aivars J. Lelis ◽  
Daniel B. Habersat ◽  
...  
Keyword(s):  
Surface Roughness ◽  
First Principles ◽  
Room Temperature ◽  
Device Simulation ◽  
Mobility Model ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Coulomb Scattering ◽  
Interface Traps ◽  
Low Field

A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the effects of bulk and surface phonons, surface roughness and Coulomb scattering by occupied interface traps and fixed oxide charges, has been developed. A first principles quasi-2D Coulomb scattering mobility model specifically for SiC MOSFETs has been formulated. Using this, we have been able to extract the interface trap density of states profile for 4H-SiC MOSFETs and have shown that at room temperature, Coulomb scattering controls the total mobility close to the interface. High temperature, low field simulations and experiments show that the current increases with increase in temperature. The effect of Coulomb scattering decreases with increase in temperature causing an increase in the total mobility near the interface at low gate voltages.

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

2006 ◽  
pp. 1321-1324
Author(s):  
S. Potbhare ◽  
Gary Pennington ◽  
Neil Goldsman ◽  
Aivars J. Lelis ◽  
D.B. Habersat ◽  
...  
Keyword(s):  
First Principles ◽  
Device Simulation ◽  
Mobility Model ◽  
Coulomb Scattering

scholarly journals First-principles characterization of single-electron polaron in WO3

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Eric Bousquet ◽  
Hanen Hamdi ◽  
Pablo Aguado-Puente ◽  
Ekhard K. H. Salje ◽  
Emilio Artacho ◽  
...  
Keyword(s):  
First Principles ◽  
Single Electron

Characterization of the B⋯π-system interaction via topology of the experimental charge density distribution in the crystal of 3-chloro-7α-phenyl-3-borabicyclo[3.3.1]nonane

2004 ◽  
Vol 384 (1-3) ◽  
pp. 40-44 ◽  
Author(s):  
Konstatin A Lyssenko ◽  
Mikhail Yu Antipin ◽  
Mikhail E Gurskii ◽  
Yurii N Bubnov ◽  
Anna L Karionova ◽  
...  
Keyword(s):  
Density Distribution ◽  
Charge Density ◽  
Charge Density Distribution ◽  
Experimental Charge Density

Effect of Boron and Hydrogen on the Electronic Structure of Ni3Al

1993 ◽  
Vol 319 ◽  
Author(s):  
N. Kioussis ◽  
H. Watanabe ◽  
R.G. Hemker ◽  
W. Gourdin ◽  
A. Gonis ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Charge Density ◽  
First Principles ◽  
Electronic Structure Calculations ◽  
Interstitial Site ◽  
Octahedral Interstitial Site ◽  
Interstitial Region ◽  
Ordered Intermetallic ◽  
Lmto Method ◽  
Structure Calculations

AbstractUsing first-principles electronic structure calculations based on the Linear-Muffin-Tin Orbital (LMTO) method, we have investigated the effects of interstitial boron and hydrogen on the electronic structure of the L12 ordered intermetallic Ni3A1. When it occupies an octahedral interstitial site entirely coordinated by six Ni atoms, we find that boron enhances the charge distribution found in the strongly-bound “pure” Ni3AI crystal: Charge is depleted at Ni and Al sites and enhanced in interstitial region. Substitution of Al atoms for two of the Ni atoms coordinating the boron, however, reduces the interstitial charge density between certain atomic planes. In contrast to boron, hydrogen appears to deplete the interstitial charge, even when fully coordinated by Ni atoms. We suggest that these results are broadly consistent with the notion of boron as a cohesion enhancer and hydrogen as an embrittler.

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Mobility Model ◽  
Effect Of Temperature ◽  
Coulomb Scattering ◽  
Interface Traps ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Scattering Effects ◽  
Charge Concentration ◽  
Substrate Doping

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.

Environment Sensitive Embedding Energies of Impurities, and Grain Boundary Relaxation in Iron

1991 ◽  
Vol 238 ◽  
Author(s):  
Genrich L. Krasko
Keyword(s):  
Charge Density ◽  
First Principles ◽  
Electron Charge ◽  
Deformation Wave ◽  
Electron Charge Density ◽  
Impurity Site ◽  
Embedded Atom ◽  
Bcc Iron ◽  
Boundary Relaxation ◽  
Low Solubility

ABSTRACTImpurities, such as H, P, S, B, etc, have a very low solubility in iron, and therefore prefer to segregate at the grain boundaries (GBs). In order to analyze the energetics of the impurities on the iron GB, the LMTO calculations were performed on a simple 8-atom supercel 1 emulating a typical (capped trigonal prism) GB environment. The so-called “environment-sensitive embedding energies” were calculated for H, B, C, N, O, Al, Si, P, and S, as a function of the electron charge density due to the host atoms at the impurity site. It was shown that, at the electron charge density typical of a GB, B and C have the lowest energy among the analyzed impurities, and thus would compete with them for the site on the GB, tending to push the other impurities off the GB. The above energies were then used in a modified Finnis-Sinclair embedded atom approach for calculating the equilibrium interplanar distances in the vicinity of a (111) σ3 tilt GB plane, both for the clean GB and that with an impurity. These distances were found to be oscillating, returning to the equilibrium spacing between (111) planes in bulk BCC iron by the 10th-12th plane off the GB plane. H, B, C, N and O actually dampen the deformation wave (making the oscillation amplitudes less than in the clean GB), while, Al, Si, P and S result in an increase of the oscillations. The effect of B, C, N and O may be interpreted as cohesion enhancement; this conclusion supports our earlier first-principles results [1] on B and C.

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