Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy

2011 ◽  
Vol 8 (5) ◽  
pp. 1439-1444 ◽  
Author(s):  
S. V. Novikov ◽  
C. T. Foxon ◽  
A. J. Kent
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bulk Crystals ◽  
Zinc Blende ◽  
Cubic Gan

Zinc-blende (Cubic) GaN and AlGaN Layers, Structures and Bulk Crystals by Molecular Beam Epitaxy

2010 ◽  
Author(s):  
Sergei V. Novikov ◽  
Norzaini Zainal ◽  
Andrey V. Akimov ◽  
Chris R. Staddon ◽  
C. Thomas Foxon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bulk Crystals ◽  
Zinc Blende ◽  
Cubic Gan

scholarly journals Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

2012 ◽  
Vol 350 (1) ◽  
pp. 80-84 ◽  
Author(s):  
S.V. Novikov ◽  
C.R. Staddon ◽  
F. Luckert ◽  
P.R. Edwards ◽  
R.W. Martin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bulk Crystals ◽  
Zinc Blende

Free-standing zinc-blende (cubic) GaN substrates grown by a molecular beam epitaxy process

2008 ◽  
Vol 245 (5) ◽  
pp. 890-892 ◽  
Author(s):  
C. T. Foxon ◽  
S. V. Novikov ◽  
N. M. Stanton ◽  
R. P. Campion ◽  
A. J. Kent
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Standing ◽  
Zinc Blende ◽  
Cubic Gan

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan ◽  
Gan Film ◽  
Thermal Stability Of

Molecular beam epitaxy based growth of cubic GaN quantum dots

2011 ◽  
Vol 8 (5) ◽  
pp. 1495-1498 ◽  
Author(s):  
T. Schupp ◽  
T. Meisch ◽  
B. Neuschl ◽  
M. Feneberg ◽  
K. Thonke ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan

scholarly journals Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

2014 ◽  
Vol 403 ◽  
pp. 43-47 ◽  
Author(s):  
S.V. Novikov ◽  
R.E. L. Powell ◽  
C.R. Staddon ◽  
A.J. Kent ◽  
C.T. Foxon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Standing ◽  
Zinc Blende

Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation

2020 ◽  
Vol 699 ◽  
pp. 137915 ◽  
Author(s):  
S.A. García Hernández ◽  
V.D. Compeán García ◽  
E. López Luna ◽  
M.A. Vidal
Keyword(s):  
Elastic Modulus ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan
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