Influence of growth conditions on the As antisites, As/sub Ga//sup 0/ and As/sub Ga//sup +/ concentrations in the low temperature GaAs MBE growth: A first theoretical study

2002 ◽  
Author(s):  
N. Krishnan ◽  
R. Venkat ◽  
D.L. Dorsey
Keyword(s):  
Low Temperature ◽  
Theoretical Study ◽  
Growth Conditions ◽  
Mbe Growth ◽  
Low Temperature Gaas

scholarly journals Study of the island morphology at the early stages of Fe/Mo(110) MBE growth

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
Dmytro Goykolov ◽  
Miroslav Kotrla
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Theoretical Study ◽  
Morphological Changes ◽  
Nearest Neighbors ◽  
Sos Model ◽  
Mbe Growth ◽  
Calculated Dependence ◽  
Average Aspect Ratio ◽  
Higher Temperature

AbstractWe present theoretical study of morphology of Fe islands grown at Mo(110) surface in submonolayer MBE mode. We utilize atomistic SOS model with bond counting, and interactions of Fe adatom up to third nearest neighbors. We performed KMC simulations for different values of adatom interactions and varying temperatures. We have found that, while for the low temperature islands are fat fractals, for the temperature 500 K islands have faceted rhombic-like shape. For the higher temperature, islands acquire a rounded shape. In order to evaluate qualitatively morphological changes, we measured average aspect ratio of islands. We calculated dependence of the average aspect ratio on the temperature, and on the strength of interactions of an adatom with neighbors.

Theory of Ga, N and H terminated GaN (0001)/(0001) surfaces

1997 ◽  
Vol 482 ◽  
Author(s):  
J. Eisner ◽  
M. Haugk ◽  
R. Gutierrez ◽  
Th. Frauenheim
Keyword(s):  
Electrical Properties ◽  
Theoretical Study ◽  
Growth Conditions ◽  
Mbe Growth ◽  
Atomic Structures ◽  
Mocvd Growth ◽  
Formation Energies

AbstractWe present a theoretical study of atomic structures, electrical properties and formation energies for a variety of possible reconstructions with 1×1 and 2×2 periodicity of the GaN(0001) and (0001) surfaces. We find that during MBE growth in the (0001) direction 2×2 structures become stable under N rich growth conditions while Ga rich environment should yield structures with 1×1 periodicity. Considering MBE growth on (0001) surfaces, among the investigated structures only those with 1×1 periodicity are predicted to be stable. During MOCVD growth, where H terminated surfaces may occur, only structures with lx1 periodicity are found to be stable for both growth directions.

Photoluminescence of MBE and MOCVD ZnTe Films on GaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
B. A. Wilson ◽  
Carl E. Bonner ◽  
R. D. Feldman ◽  
R. F. Austin ◽  
D. W. Kisker ◽  
...  
Keyword(s):  
Low Temperature ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Growth Chamber ◽  
Mbe Growth ◽  
Pl Spectra ◽  
Gaas Substrates ◽  
Optimal Value ◽  
Stress Levels ◽  
Low Temperature Photoluminescence

ABSTRACTWe present low-temperature photoluminescence (PL) spectra of MBE and MOCVD ZnTe layers deposited on (100) GaAs substrates under different growth conditions. Strong bands associated with Zn vacancies are observed in the MBE materials, while the MOCVD spectra are dominated by sharp impurity-related lines. Stress levels less than 0.1 kbar are determined for both the MBE and MOCVD layers. A study of the effects of the Zn:Te ratio in the MBE growth chamber reveals an optimal value of −2.2 for a growth temperature of 325°C.

Photoelectronic Properties of Low Temperature GaAs Grown on Silicon and GaAs Substrates by Mbe

1989 ◽  
Vol 145 ◽  
Author(s):  
Raymond P. Mariella ◽  
Jeffrey D. Morse ◽  
Roger Aines ◽  
Charles E. Hunt
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Electronic Transport ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Electronic Transport Properties ◽  
Gaas Substrates ◽  
Low Temperature Gaas

AbstractThe characteristics of GaAs layers grown by MBE at growth temperatures from 200 °C to 400 °C have been evaluated by photoconductivity experiments in order to understand the photoelectronic properties of this material. Low temperature (LT) growth of GaAs on both silicon and GaAs substrates has been investigated in an attempt to better understand the nature of defects which are created in epitaxial layers grown under these conditions. Results from experiments on both annealed and unannealed LT samples indicate that the electronic transport properties of the epilayers can be controlled by selecting the appropriate growth conditions.

Microstructural Characterization of Low Temperature GaAs(111)B MBE Growth by AFM and Tem

1992 ◽  
Vol 280 ◽  
Author(s):  
M. P. de Boer ◽  
J. E. Angelo ◽  
A. M. Dabiran ◽  
P. I. Cohen ◽  
W. W. Gerberich
Keyword(s):  
Low Temperature ◽  
Microstructural Characterization ◽  
Cross Sectional ◽  
Plan View ◽  
Mbe Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Low Temperature Gaas

ABSTRACTAtomic Force Microscopy (AFM) images are correlated with Transmission Electron Microscopy (TEM) plan-view images in a structure consisting of <111> oriented GaAs layers grown by molecular beam epitaxy (MBE) at 500°C. We present results on the applicability of AFM, which requires short sample preparation and imaging time relative to TEM, in obtaining information on twin density and growth pits of these low temperature samples. Also, we discuss the behavior of twin boundaries by comparing plan-views and cross sectional TEM images.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator

1991 ◽  
Vol 241 ◽  
Author(s):  
L.-W. Yin ◽  
J. Ibbetson ◽  
M. M. Hashemi ◽  
W. Jiang ◽  
S.-Y. Hu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gaas Layer ◽  
Gate Insulator ◽  
Gate Bias ◽  
Channel Current ◽  
Turn On ◽  
Dc Characteristics ◽  
Low Temperature Gaas ◽  
Channel Separation ◽  
Lt Gaas

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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