The role of deep traps in photoconductivity transients in SI GaAs

2005 ◽  
Author(s):  
B. Santic ◽  
U.V. Desnica ◽  
N. Radic ◽  
D. Desnica ◽  
M. Pavlovic
Keyword(s):  
Deep Traps

Role of the Substrate Doping in the Activation of Fe2+ centers in Fe implanted InP

2005 ◽  
Vol 864 ◽  
Author(s):  
T. Cesca ◽  
A. Gasparotto ◽  
G. Mattei ◽  
A. Verna ◽  
B. Fraboni ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Activation ◽  
Electrical Behavior ◽  
Doping Density ◽  
Annealing Behavior ◽  
Deep Traps ◽  
Postimplantation Annealing ◽  
N Doping ◽  
Substrate Doping

AbstractWe have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The lattice location of the Fe atoms and the effect of postimplantation annealing treatments have been studied by PIXE-channeling measurements. I-V, CV and DLTS analyses have been used to characterize the electrical properties related to the presence Fe2+/3+ deep traps. The results show that the background n-doping density play a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. The same effect has been observed in samples containing Fe concentrations both above and below the Fe solubility threshold in InP.

Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe

2007 ◽  
Vol 22 (11) ◽  
pp. 3249-3254 ◽  
Author(s):  
V. Babentsov ◽  
J. Franc ◽  
H. Elhadidy ◽  
A. Fauler ◽  
M. Fiederle ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge State ◽  
Strong Dependence ◽  
High Resistivity ◽  
Level Variation ◽  
Radiative Transitions ◽  
Deep Traps ◽  
First Time ◽  
Positively Charged

We explored the growth and characteristics of CdTe doped with Sn to heighten our understanding of the role of deep levels on electrical compensation and trapping. We demonstrated, for the first time, the strong dependence of the SnCd charge state on the Fermi-level variation (2–3kT) in high-resistivity CdTe. The concentration of deep traps for electrons was determined by the number of doubly positively charged Sn2+ atoms. Thermoelectric-effect spectroscopy and photovoltage measurements revealed the conversion of the SnCd defect from the electron SnCd2+ trap to the hole SnCd0 trap. The results agree well with the existence of a negative U-center in the SnCd0/2+ defect. We also showed that the neutral Sn defect is responsible for the near midgap C-band → bound hole radiative transitions band with a maximum at 0.76 eV.

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

2002 ◽  
Vol 715 ◽  
Author(s):  
Shaoyun Huang ◽  
Souri Banerjee ◽  
Shunri Oda
Keyword(s):  
Electrical Properties ◽  
Nanocrystalline Silicon ◽  
Interface States ◽  
Electron Trapping ◽  
Device Performance ◽  
Positive Shift ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Nanocrystalline Si

AbstractTemperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structures have been studied. A clear positive shift in capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics suggests electron trapping in nc-Si dots. The role of interface states and deep traps in these devices has also been examined, which shows that they have little effect on the overall device performance.

scholarly journals The almost hidden role of deep traps when measuring afterglow and thermoluminescence of persistent phosphors

2020 ◽  
Vol 226 ◽  
pp. 117496 ◽  
Author(s):  
David Van der Heggen ◽  
Dimitri Vandenberghe ◽  
Nasrin K. Moayed ◽  
Johan De Grave ◽  
Philippe F. Smet ◽  
...  
Keyword(s):  
Deep Traps

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

2021 ◽  
Vol 129 (21) ◽  
pp. 215701
Author(s):  
Eric Vandermolen ◽  
Philippe Ferrandis ◽  
Frédéric Allibert ◽  
Massinissa Nabet ◽  
Martin Rack ◽  
...  
Keyword(s):  
Radio Frequency ◽  
High Resistivity ◽  
Deep Traps

scholarly journals Nonlinear Photocarrier Dynamics and the Role of Shallow Traps in Mixed-Halide Mixed-Cation Hybrid Perovskites

2021 ◽  
Author(s):  
David A. Valverde-Chávez ◽  
Esteban Rojas-Gatjens ◽  
Jacob Williamson ◽  
Sarthak Jariwala ◽  
Yangwei Shi ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Excitation Density ◽  
Shallow Trap ◽  
Time Resolved ◽  
Carrier Trapping ◽  
Carrier Lifetimes ◽  
Deep Traps ◽  
The Impact ◽  
Shallow Traps

<p>We examine the role of surface passivation on carrier trapping and nonlinear recombination dynamics in hybrid metal-halide perovskites by means of excitation correlation photoluminescence (ECPL) spectroscopy. We find that carrier trapping occurs on subnanosecond timescales in both control (unpassivated) and passivated samples, which is consistent within a shallow-trap model. However, the impact of passivation has a direct effect on both shallow and deep traps. Our results reveal that the effect of passivation of deep traps is responsible for the increase of the carrier lifetimes, while the passivation of shallow traps reduces the excitation density required for shallow-trap saturation. Our work demonstrates how ECPL provides details about the passivation of shallow traps beyond those available via conventional time-resolved photoluminescence techniques.</p>

scholarly journals Nonlinear Photocarrier Dynamics and the Role of Shallow Traps in Mixed-Halide Mixed-Cation Hybrid Perovskites

2021 ◽  
Author(s):  
David A. Valverde-Chávez ◽  
Esteban Rojas-Gatjens ◽  
Jacob Williamson ◽  
Sarthak Jariwala ◽  
Yangwei Shi ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Excitation Density ◽  
Shallow Trap ◽  
Time Resolved ◽  
Carrier Trapping ◽  
Carrier Lifetimes ◽  
Deep Traps ◽  
The Impact ◽  
Shallow Traps

<p>We examine the role of surface passivation on carrier trapping and nonlinear recombination dynamics in hybrid metal-halide perovskites by means of excitation correlation photoluminescence (ECPL) spectroscopy. We find that carrier trapping occurs on subnanosecond timescales in both control (unpassivated) and passivated samples, which is consistent within a shallow-trap model. However, the impact of passivation has a direct effect on both shallow and deep traps. Our results reveal that the effect of passivation of deep traps is responsible for the increase of the carrier lifetimes, while the passivation of shallow traps reduces the excitation density required for shallow-trap saturation. Our work demonstrates how ECPL provides details about the passivation of shallow traps beyond those available via conventional time-resolved photoluminescence techniques.</p>

Role of deep traps in carrier generation and transport in differently doped InP wafers

2006 ◽  
Vol 9 (1-3) ◽  
pp. 390-393 ◽  
Author(s):  
N. Sun ◽  
K. Jarasiunas ◽  
M. Sudzius ◽  
A. Kadys ◽  
X. Zhou ◽  
...  
Keyword(s):  
Carrier Generation ◽  
Deep Traps

On the Interaction of Dislocations with Impurities in Silicon

2005 ◽  
Vol 245-246 ◽  
pp. 15-22
Author(s):  
Daniela Cavalcoli ◽  
Anna Cavallini
Keyword(s):  
Plastic Deformation ◽  
Electronic Transitions ◽  
Conduction Band Edge ◽  
Extended Defects ◽  
Defect States ◽  
Present Contribution ◽  
Oxygen Precipitation ◽  
Deep Traps ◽  
P Type

Dislocations and impurities in silicon have been widely investigated since many years, nevertheless many questions on this subject remain still unsolved. As an example, theory, models and experimental phenomena provide evidence of the existence of shallow bands in silicon induced by the dislocation strain field. Nevertheless, only deep bands, likely associated with contamination at dislocations, have been detected up to now by junction spectroscopy. The present contribution reviews several results, obtained by the authors, on dislocation impurity interactions and their effects on the electronic properties of defect states in silicon. Point and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical methods. Different materials (oxygen precipitated and deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen precipitation, plastic deformation and metallic contamination on non-radiative electronic transitions at defect centers. A deep hole trap, named T1, has been associated to dislocation-related impurity centers, while additional deep traps have been related to contamination by grown-in transition metals and to clusters involving oxygen atoms. Moreover, experimental results obtained by junction spectroscopy assessed the existence of dislocation related shallow states. These were found to be located at 70 and 60 meV from the valence and conduction band edge, respectively.

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