Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

2021 ◽  
Vol 129 (21) ◽  
pp. 215701
Author(s):  
Eric Vandermolen ◽  
Philippe Ferrandis ◽  
Frédéric Allibert ◽  
Massinissa Nabet ◽  
Martin Rack ◽  
...  
Keyword(s):  
Radio Frequency ◽  
High Resistivity ◽  
Deep Traps

Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe

2007 ◽  
Vol 22 (11) ◽  
pp. 3249-3254 ◽  
Author(s):  
V. Babentsov ◽  
J. Franc ◽  
H. Elhadidy ◽  
A. Fauler ◽  
M. Fiederle ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge State ◽  
Strong Dependence ◽  
High Resistivity ◽  
Level Variation ◽  
Radiative Transitions ◽  
Deep Traps ◽  
First Time ◽  
Positively Charged

We explored the growth and characteristics of CdTe doped with Sn to heighten our understanding of the role of deep levels on electrical compensation and trapping. We demonstrated, for the first time, the strong dependence of the SnCd charge state on the Fermi-level variation (2–3kT) in high-resistivity CdTe. The concentration of deep traps for electrons was determined by the number of doubly positively charged Sn2+ atoms. Thermoelectric-effect spectroscopy and photovoltage measurements revealed the conversion of the SnCd defect from the electron SnCd2+ trap to the hole SnCd0 trap. The results agree well with the existence of a negative U-center in the SnCd0/2+ defect. We also showed that the neutral Sn defect is responsible for the near midgap C-band → bound hole radiative transitions band with a maximum at 0.76 eV.

Tunable optoelectronic properties of radio frequency sputter-deposited Sb2Se3 thin films: Role of growth angle and thickness

Solar Energy ◽  
2019 ◽  
Vol 194 ◽  
pp. 716-723
Author(s):  
Alapan Dutta ◽  
Ranveer Singh ◽  
Sanjeev Kumar Srivastava ◽  
Tapobrata Som
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Optoelectronic Properties ◽  
Growth Angle ◽  
Sputter Deposited

The role of deep traps in photoconductivity transients in SI GaAs

2005 ◽  
Author(s):  
B. Santic ◽  
U.V. Desnica ◽  
N. Radic ◽  
D. Desnica ◽  
M. Pavlovic
Keyword(s):  
Deep Traps

Role of the Substrate Doping in the Activation of Fe2+ centers in Fe implanted InP

2005 ◽  
Vol 864 ◽  
Author(s):  
T. Cesca ◽  
A. Gasparotto ◽  
G. Mattei ◽  
A. Verna ◽  
B. Fraboni ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Activation ◽  
Electrical Behavior ◽  
Doping Density ◽  
Annealing Behavior ◽  
Deep Traps ◽  
Postimplantation Annealing ◽  
N Doping ◽  
Substrate Doping

AbstractWe have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The lattice location of the Fe atoms and the effect of postimplantation annealing treatments have been studied by PIXE-channeling measurements. I-V, CV and DLTS analyses have been used to characterize the electrical properties related to the presence Fe2+/3+ deep traps. The results show that the background n-doping density play a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. The same effect has been observed in samples containing Fe concentrations both above and below the Fe solubility threshold in InP.

Superconducting Resonators: Decrease of Q-Factor at High Accelerating Field

2014 ◽  
Vol 9 (2) ◽  
pp. 22-35
Author(s):  
Aleksandr Dzyuba ◽  
Andrey Arzhannikov
Keyword(s):  
Radio Frequency ◽  
Research Methods ◽  
Q Factor ◽  
Chemical Research ◽  
Superconducting Resonators ◽  
Alternative Processing ◽  
Physico Chemical ◽  
Superconducting Radio Frequency ◽  
Processing Steps

Results combining efforts of different groups on investigation of losses in superconducting radio frequency cavities made of niobium are presented. Peculiarities of such losses and of their remedies are considered for dissipation at high accelerating voltages. The main results of RF tests as well as main experiments conducted via physico-chemical research methods on samples are discussed. The role of different type of defects on losses is presented. The candidate mechanisms for dissipation are considered based on exhibited results. As a conclusion the prediction is made on possible alternative processing steps for improvement of cost, time and safety efficiency of current technological procedures

The Role of Radio Frequency Identification in Modern Libraries

2015 ◽  
pp. 361-385 ◽  
Author(s):  
Kijpokin Kasemsap
Keyword(s):  
Radio Frequency ◽  
Radio Frequency Identification ◽  
Operating Cost ◽  
Sustainable Competitive Advantage ◽  
Cost Information ◽  
Technology Infrastructure ◽  
Information Technology Infrastructure ◽  
Frequency Identification ◽  
Global Operations

This chapter reveals the role of radio frequency identification (RFID) in modern libraries, thus demonstrating the theoretical and practical concept of RFID; the utilization of RFID in global operations; RFID perspectives in modern libraries (i.e., operating cost, information technology infrastructure cost, skilled RFID workers, access rate, patron policy, data security, barcode factor, and patron issues); the applications of RFID in modern libraries (i.e., data management, circulation, inventory, assistance in searching and orientation, data accuracy and reliability, theft prevention, utilization statistics for serials, and personal service); and the significance of RFID in modern libraries. RFID solutions can be utilized to reduce the operating costs through decreasing labor costs, enhancing automation, improving tracking and tracing, and preventing the loss of materials. Applying the RFID will significantly improve educational performance and gain sustainable competitive advantage in modern libraries.

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