Nitrogen Doped Polcrystalline 3C-Sic Films Deposited by LPCVD for MEMS Applications

2007 ◽  
Author(s):  
X. A. Fu ◽  
J. Trevino ◽  
S. Noh ◽  
C. A. Zorman ◽  
M. Mehregany
Keyword(s):  
Nitrogen Doped ◽  
Sic Films

A study of electrical properties and microstructure of nitrogen-doped poly-SiC films deposited by LPCVD

2007 ◽  
Vol 136 (2) ◽  
pp. 613-617 ◽  
Author(s):  
Sangsoo Noh ◽  
Xiaoan Fu ◽  
Li Chen ◽  
Mehran Mehregany
Keyword(s):  
Electrical Properties ◽  
Nitrogen Doped ◽  
Sic Films

Etching Characteristics and Surface Morphology of Nitrogen-Doped a-SiC Films Prepared by RF Magnetron Sputtering

2019 ◽  
Vol 14 (1) ◽  
pp. 375-384 ◽  
Author(s):  
Mariana A. Fraga ◽  
Rodrigo S. Pessoa ◽  
Ivo C. Oliveira ◽  
Marcos Massi ◽  
Homero S. Maciel ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Doped ◽  
Sic Films

Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

2007 ◽  
Vol 556-557 ◽  
pp. 179-182 ◽  
Author(s):  
Guo Sheng Sun ◽  
Jin Ning ◽  
Xing Fang Liu ◽  
Yong Mei Zhao ◽  
Jia Ye Li ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitrogen Doped ◽  
Hall Effect Measurements ◽  
Heavily Doped ◽  
Sic Films

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 μm-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 ⋅cm, 54 cm2/Vs, and 2.0×1017 cm-3, respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10-3 ⋅cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 μm. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

Mechanical Testing of Flexible Silicon Carbide Interconnect Ribbons

2006 ◽  
Vol 527-529 ◽  
pp. 1107-1110
Author(s):  
R. Panday ◽  
Xiao An Fu ◽  
Srihari Rajgopal ◽  
T. Lisby ◽  
S.A. Nikles ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Prior Work ◽  
Curved Beams ◽  
Neural Probes ◽  
Nitrogen Doped ◽  
Doped Silicon ◽  
Superior Mechanical Properties ◽  
Simulation Results ◽  
Sic Films

This paper explores polycrystalline 3C-silicon carbide (poly-SiC) deposited by LPCVD for fabricating flexible ribbon cable interconnects for micromachined neural probes. While doped silicon is used currently, we hypothesized that poly-SiC will provide enhanced mechanical robustness due to SiC’s superior mechanical properties. Paralleling prior work in silicon, forty-two different designs were fabricated from nitrogen-doped poly-SiC films deposited by LPCVD at 900°C using dichlorosilane and acetylene as precursors. The different designs were then tested in bending and twisting modes. Curved beams were found to bend nearly 250% more than straight beams before fracture. Longer beams withstood greater bending and twisting due to greater compliance. Longer and narrower beams generally outperformed shorter beams irrespective of design. Also, doped poly-SiC beams had, on average, breaking angles that were greater than those of identical doped silicon beams by ~50% in bending and ~20% in twisting modes. The paper details the designs studied, describes the fabrication process for the test structures and compares/contrasts the testing and simulation results related to the different designs to identify best design practices.

Boron-Nitrogen Doped Dihydroindeno[1,2-b]fluorene Derivatives as Acceptors in Organic Solar Cells

2019 ◽  
Author(s):  
Matthew Morgan ◽  
Maryam Nazari ◽  
Thomas Pickl ◽  
J. Mikko Rautiainen ◽  
Heikki M. Tuononen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Broad Absorption ◽  
Nitrogen Doped ◽  
Large Depth ◽  
End Products ◽  
Boron Nitrogen ◽  
The Way

The electrophilic borylation of 2,5-diarylpyrazines results in the formation of boron-nitrogen doped dihydroindeno[1,2-<i>b</i>]fluorene which can be synthesized via mildly air-sensitive techniques and the end products handled readily under atmosphereic conditions. Through transmetallation via diarylzinc reagents a series of derivatives were sythesized which show broad absorption profiles that highlight the versatility of this backbone to be used in organic solar cell devices. These compounds can be synthesized in large yields, in alow number of steps and functionalized at many stages along the way providing a large depth of possibilities. Exploratory device paramaters were studied and show PCE of 2%.

Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography

2020 ◽  
Author(s):  
Fumihiro Fujie ◽  
Shunta Harada ◽  
Kenji Hanada ◽  
Hiromasa Suo ◽  
Haruhiko Koizumi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Stacking Fault ◽  
X Ray ◽  
Nitrogen Doped ◽  
Fault Behavior
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