Silicon-based microcantilevers for multiple biological sample deposition

Scanning tunneling microscopy of E. coli RNA polymerase deposited onto an Au substrate by an electrochemical process

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100086192 ◽

1991 ◽

Vol 49 ◽

pp. 378-379

Author(s):

Rebecca W. Keller ◽

Carlos Bustamante ◽

David Bear

Keyword(s):

Scanning Tunneling Microscope ◽

Biological Sample ◽

Substrate Surface ◽

Electrochemical Process ◽

Atomic Resolution ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Tunneling Microscope ◽

E Coli ◽

Preparation Techniques

Under ideal conditions, the Scanning Tunneling Microscope (STM) can create atomic resolution images of different kinds of samples. The STM can also be operated in a variety of non-vacuum environments. Because of its potentially high resolution and flexibility of operation, it is now being applied to image biological systems. Several groups have communicated the imaging of double and single stranded DNA.However, reproducibility is still the main problem with most STM results on biological samples. One source of irreproducibility is unreliable sample preparation techniques. Traditional deposition methods used in electron microscopy, such as glow discharge and spreading techniques, do not appear to work with STM. It seems that these techniques do not fix the biological sample strongly enough to the substrate surface. There is now evidence that there are strong forces between the STM tip and the sample and, unless the sample is strongly bound to the surface, it can be swept aside by the tip.

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Deposition of ternary silicon based compounds by CVD techniques

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999813 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-101-Pr8-107

Author(s):

F. J. Martí ◽

A. Castro ◽

J. Olivares ◽

C. Gómez-Aleixandre ◽

J. M. Albella

Keyword(s):

Silicon Based

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CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20013107 ◽

2001 ◽

Vol 11 (PR3) ◽

pp. Pr3-861-Pr3-867 ◽

Cited By ~ 3

Author(s):

S. M. Zemskova ◽

J. A. Haynes ◽

K. M. Cooley

Keyword(s):

Corrosion Protection ◽

Silicon Based

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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

MRS Proceedings ◽

10.1557/proc-444-161 ◽

1996 ◽

Vol 444 ◽

Cited By ~ 1

Author(s):

Hyeon-Seag Kim ◽

D. L. Polla ◽

S. A. Campbell

Keyword(s):

Thin Films ◽

Loss Factor ◽

High Field ◽

Microelectromechanical Systems ◽

Charge Trapping ◽

Metal Organic ◽

Electrical Reliability ◽

Silicon Based ◽

Degradation Properties ◽

Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

MRS Proceedings ◽

10.1557/proc-444-191 ◽

1996 ◽

Vol 444 ◽

Author(s):

H. Okumoto ◽

M. Shimomura ◽

N. Minami ◽

Y. Tanabe

Keyword(s):

Charge Transfer ◽

Chemical Modification ◽

Electronic Transport ◽

Hole Transport ◽

Electron Acceptors ◽

Oxygen Atmosphere ◽

Dangling Bonds ◽

Silicon Based ◽

Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

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Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

MRS Proceedings ◽

10.1557/proc-862-a21.1 ◽

2005 ◽

Vol 862 ◽

Author(s):

Scott J. Jones ◽

Joachim Doehler ◽

Tongyu Liu ◽

David Tsu ◽

Jeff Steele ◽

...

Keyword(s):

Solar Cell ◽

Amorphous Silicon ◽

Transparent Conductive Oxide ◽

Open Circuit ◽

Long Term Stability ◽

Back Reflectors ◽

Stability Issues ◽

Silicon Based ◽

Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

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