Gas-phase Silicon Etching With Bromine Trifluoride

AbstractLaser-induced fluorescence (LIF) is an ideal technique to determine the gas phase concentration of the chemically reactive radical species in processing plasmas. Quantitative species concentration measurements require spectroscopic and collision dynamics data. Experiments to obtain such data for the B2 and Σ+ B′2 Δ states of SiCl are described. Using LIF, the transition strengths, radiative lifetimes, and collisional removal rates are determined. Collisional transfer between the two excited electronic states, B′→B, shows a very unusual quantum state specificity for the final vibrational levels which is quite different for each of the rare gas collision partners (He, Ne, Ar). Such energy transfer makes the B′2 Δ state unsuitable for quantitative LIF diagnostics; however, the B2Σ+ state appears to be an ideal excited state for LIF diagnostic measurements in silicon etching plasmas.

Download Full-text

Single-Crystal Silicon Etching Characteristics Using Excimer Laser Cℓ2 GAS

MRS Proceedings ◽

10.1557/proc-29-167 ◽

1983 ◽

Vol 29 ◽

Cited By ~ 19

Author(s):

T. Arikado ◽

M. Sekine ◽

H. Okano ◽

Y. Horiike

Keyword(s):

Single Crystal ◽

Gas Phase ◽

Excimer Laser ◽

Plasma Etching ◽

Etch Rate ◽

Single Crystal Silicon ◽

Silicon Etching ◽

Crystal Silicon ◽

Direct Irradiation ◽

P Type

ABSTRACTSingle-crystal Si etching characteristics using an excimer laser (308 nm, XeCℓ) in the Cℓ2 gas have been studied. In lightly doped n-type and p-type Si, the etch rate of (100) is higher than that of (111), thus the (111) sidewall appears clearly for the irradiation to (100), while both orientations show almost the same etch rates in n+-doped Si. The n-type Si is etched spontaneously even by photo-dissociated Cℓ radicals generated in the gas phase, but no p-type Si etching occurs without direct irradiation. In addition, both types of etch rate-dependence on sheet resistance demonstrate that the number of electrons in the conduction band plays an essential role in the Si etching. This fact supports the field-assisted mechanism in the plasma etching proposed by Winters.

Download Full-text

Residual Gas Reactions in the Electron Microscope: I. Qualitative Observations on the Water Gas Reaction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100101207 ◽

1968 ◽

Vol 26 ◽

pp. 292-293

Author(s):

Richard E. Hartman ◽

Roberta S. Hartman ◽

Peter L. Ramos

Keyword(s):

Electron Beam ◽

Electron Microscope ◽

Gas Phase ◽

Absolute Temperature ◽

Residual Gas ◽

Gas Reactions ◽

Image Position ◽

The Right ◽

Water Gas ◽

Thinning Rate

The action of water and the electron beam on organic specimens in the electron microscope results in the removal of oxidizable material (primarily hydrogen and carbon) by reactions similar to the water gas reaction .which has the form:The energy required to force the reaction to the right is supplied by the interaction of the electron beam with the specimen.The mass of water striking the specimen is given by:where u = gH2O/cm2 sec, PH2O = partial pressure of water in Torr, & T = absolute temperature of the gas phase. If it is assumed that mass is removed from the specimen by a reaction approximated by (1) and that the specimen is uniformly thinned by the reaction, then the thinning rate in A/ min iswhere x = thickness of the specimen in A, t = time in minutes, & E = efficiency (the fraction of the water striking the specimen which reacts with it).

Download Full-text

Integration of Core-Edge Spectroscopy Methods for the Study of Polymers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010016323x ◽

1996 ◽

Vol 54 ◽

pp. 154-155

Author(s):

E. G. Rightor

Keyword(s):

Excited State ◽

Polymer Blends ◽

Gas Phase ◽

Spatial Resolution ◽

High Spatial Resolution ◽

Electronic States ◽

Core Electron ◽

Bulk Solids ◽

Development Application

Core edge spectroscopy methods are versatile tools for investigating a wide variety of materials. They can be used to probe the electronic states of materials in bulk solids, on surfaces, or in the gas phase. This family of methods involves promoting an inner shell (core) electron to an excited state and recording either the primary excitation or secondary decay of the excited state. The techniques are complimentary and have different strengths and limitations for studying challenging aspects of materials. The need to identify components in polymers or polymer blends at high spatial resolution has driven development, application, and integration of results from several of these methods.

Download Full-text