Structural and optical properties of N-doped ZnO nanorod arrays prepared using sol-gel immersion method

Author(s):  
A.S. Ismail ◽  
M.H. Mamat ◽  
N.D. Md. Sin ◽  
M.F. Malek ◽  
S.A. Saidi ◽  
...  
2009 ◽  
Vol 42 (19) ◽  
pp. 195402 ◽  
Author(s):  
Boqian Yang ◽  
Peterxian Feng ◽  
Ashok Kumar ◽  
R S Katiyar ◽  
Marc Achermann

2015 ◽  
Vol 1109 ◽  
pp. 266-270
Author(s):  
M.N. Wahida ◽  
M.H. Mamat ◽  
Mohamad Rusop

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays have been synthesized on a glass substrate, where the seed layer is Al-doped ZnO thin film as well, using the sonicated sol–gel immersion method. The nanorods structure was synthesized by preparing a solution 0.0026 M of zinc nitrate hexahydrate (Zn (NO3)2·6H2O, 98%, Systerm) as a precursor, 0.1 M hexamethylenetetramine (HMT, C6H12N4, 99%, Aldrich) as a stabilizer and 0.001M aluminum nitrate nonahydrate (Al (NO3)3∙9H2O, 98%, Analar) as a dopant, dissolved in deionized (DI) water. The resistivity is 7626.72 Ωcm and the conductivity is 1.31 x 10-4 Scm-1. The peak of UV emission of the sample is at 380 nm.


2016 ◽  
Vol 163 (8) ◽  
pp. D392-D400 ◽  
Author(s):  
Lucia Campo ◽  
Elena Navarrete-Astorga ◽  
Carlos J. Pereyra ◽  
Ana Cuevas ◽  
Rocío Romero ◽  
...  

2018 ◽  
Author(s):  
A. S. Ismail ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
S. A. Saidi ◽  
M. M. Yusoff ◽  
...  

2015 ◽  
Vol 773-774 ◽  
pp. 696-700
Author(s):  
Mohamad Hafiz Mamat ◽  
Mohd Firdaus Malek ◽  
N.N. Hafizah ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
...  

Fabrication and performance of metal-semiconductor-metal (MSM)–type intrinsic zinc oxide-coated, aluminium-doped ZnO nanorod array-based ultraviolet photoconductive sensors were reported and discussed. The Al-doped ZnO nanorod arrays were prepared using sonicated sol-gel immersion method. The coating process of intrinsic ZnO onto Al-doped ZnO nanorod arrays was performed using radio-frequency (RF) magnetron sputtering at different deposition times varying from 0 to 10 min. We observed that responsivity of the sensors decreased with increasing intrinsic ZnO deposition time, decreasing from 4.81 A/W without coating to 1.37 A/W after 10 min of coating. Interestingly, the sensitivity of the sensors improved with intrinsic ZnO coating, having a maximum value of 19.0 after 1 min coating.


Author(s):  
Wei Wang ◽  
Fuchun Zhang ◽  
Xiaoyang Wang ◽  
Shuili Zhang ◽  
Junfeng Yan ◽  
...  

2013 ◽  
Vol 8 (1) ◽  
pp. 158 ◽  
Author(s):  
Suanzhi Lin ◽  
Hailong Hu ◽  
Weifeng Zheng ◽  
Yan Qu ◽  
Fachun Lai

2015 ◽  
Vol 1109 ◽  
pp. 281-285
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
A.K. Shafura ◽  
M.F. Malik ◽  
A. Ishak ◽  
...  

The Sn-doped ZnO thin films were deposited on glass and ITO by sol gel Spin Coating technique. The Structural and electrical properties of Sn-doped ZnO thin films were studied and discussed. The Sn-doped ZnO thin film particle sizes were decreased whenever the doping concentration increased. Besides that, the resistivity 7.7 x 102 Ω.cm was obtained at 2 at.% Sn-doped thin films and aligned ZnO nanorod arrays with large surface area were grown on 2 at.% Sn-doped ZnO film. Therefore, dye sensitized solar cell at 2.0 at.% Sn-doped ZnO thin films with aligned ZnO Nanorod arrays have improved in the photocurrent density and conversion efficiency.


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