Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method

2018 ◽  
Author(s):  
A. S. Ismail ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
S. A. Saidi ◽  
M. M. Yusoff ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Optical And Electrical Properties ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Immersion Method ◽  
Doped Zno

Structural, Optical and Electrical Properties of Electrodeposited Sb-Doped ZnO Nanorod Arrays

2014 ◽  
Vol 125 ◽  
pp. 124-132 ◽  
Author(s):  
J.K. Liang ◽  
H.L. Su ◽  
C.L. Kuo ◽  
S.P. Kao ◽  
J.W. Cui ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Nanorod ◽  
Optical And Electrical Properties ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno

Synthesis of Al-Doped ZnO Nanorod Arrays on Al-Doped ZnO Seed Layer and their Properties

2015 ◽  
Vol 1109 ◽  
pp. 266-270
Author(s):  
M.N. Wahida ◽  
M.H. Mamat ◽  
Mohamad Rusop
Keyword(s):  
Seed Layer ◽  
Sol Gel ◽  
Zinc Nitrate ◽  
Nitrate Hexahydrate ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Immersion Method ◽  
Uv Emission ◽  
Doped Zno

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays have been synthesized on a glass substrate, where the seed layer is Al-doped ZnO thin film as well, using the sonicated sol–gel immersion method. The nanorods structure was synthesized by preparing a solution 0.0026 M of zinc nitrate hexahydrate (Zn (NO3)2·6H2O, 98%, Systerm) as a precursor, 0.1 M hexamethylenetetramine (HMT, C6H12N4, 99%, Aldrich) as a stabilizer and 0.001M aluminum nitrate nonahydrate (Al (NO3)3∙9H2O, 98%, Analar) as a dopant, dissolved in deionized (DI) water. The resistivity is 7626.72 Ωcm and the conductivity is 1.31 x 10-4 Scm-1. The peak of UV emission of the sample is at 380 nm.

Investigation of Stress and Electrical Properties of Air-Annealed and Oxygen-Annealed Aluminium-Doped Zinc Oxide Nanorod Arrays

2013 ◽  
Vol 832 ◽  
pp. 303-309
Author(s):  
M.H. Mamat ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
N.N. Hafizah ◽  
Mohd Firdaus Malek ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Vertically Aligned ◽  
Doped Zno

In this research, we prepared aluminium (Al)-doped ZnO nanorod arrays on the glass substrate using sonicated sol-gel method. These nanorod arrays were annealed at 500 °C in air and oxygen environment using thermal furnace. Field emission scanning electron microscopy (FESEM) image reveals that nanorod arrays were deposited vertically aligned on the substrate. The stress characteristics of air-annealed and oxygen-annealed Al-doped ZnO nanorod arrays were investigated using Raman spectroscopy and X-ray diffraction (XRD) measurement. The electrical properties of the samples were investigated using two-probe current-voltage (I-V) measurement system. The results show that annealing atmospheres greatly influenced the stress and electrical properties of the nanorod arrays.

Polyethylene glycol assisted growth of Sn-doped ZnO nanorod arrays prepared via sol-gel immersion method

2018 ◽  
Author(s):  
A. S. Ismail ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
S. A. Saidi ◽  
M. M. Yusoff ◽  
...  
Keyword(s):  
Polyethylene Glycol ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Immersion Method ◽  
Doped Zno

scholarly journals Fabrication of Intrinsic Zinc Oxide-Coated, Aluminium-Doped Zinc Oxide Nanorod Array-Based Ultraviolet Photoconductive Sensors

2015 ◽  
Vol 773-774 ◽  
pp. 696-700
Author(s):  
Mohamad Hafiz Mamat ◽  
Mohd Firdaus Malek ◽  
N.N. Hafizah ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Immersion Method ◽  
Doped Zno ◽  
And Performance

Fabrication and performance of metal-semiconductor-metal (MSM)–type intrinsic zinc oxide-coated, aluminium-doped ZnO nanorod array-based ultraviolet photoconductive sensors were reported and discussed. The Al-doped ZnO nanorod arrays were prepared using sonicated sol-gel immersion method. The coating process of intrinsic ZnO onto Al-doped ZnO nanorod arrays was performed using radio-frequency (RF) magnetron sputtering at different deposition times varying from 0 to 10 min. We observed that responsivity of the sensors decreased with increasing intrinsic ZnO deposition time, decreasing from 4.81 A/W without coating to 1.37 A/W after 10 min of coating. Interestingly, the sensitivity of the sensors improved with intrinsic ZnO coating, having a maximum value of 19.0 after 1 min coating.

Photovoltaic Properties of Dye-Sensitized Solar Cells Using Novel Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Seeded Catalyst with Different Aspect Ratio

2015 ◽  
Vol 1109 ◽  
pp. 281-285
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
A.K. Shafura ◽  
M.F. Malik ◽  
A. Ishak ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dye Sensitized Solar Cells ◽  
Zno Thin Films ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Doped Zno

The Sn-doped ZnO thin films were deposited on glass and ITO by sol gel Spin Coating technique. The Structural and electrical properties of Sn-doped ZnO thin films were studied and discussed. The Sn-doped ZnO thin film particle sizes were decreased whenever the doping concentration increased. Besides that, the resistivity 7.7 x 102 Ω.cm was obtained at 2 at.% Sn-doped thin films and aligned ZnO nanorod arrays with large surface area were grown on 2 at.% Sn-doped ZnO film. Therefore, dye sensitized solar cell at 2.0 at.% Sn-doped ZnO thin films with aligned ZnO Nanorod arrays have improved in the photocurrent density and conversion efficiency.

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