Laser Annealing of Power Devices

2007 ◽  
Author(s):  
Detlef Friedrich ◽  
Helmut Bernt ◽  
Henning Hanssen ◽  
Peter Oesterlin ◽  
Henning Schmidt
Keyword(s):  
Laser Annealing ◽  
Power Devices

Laser annealing of double implanted layers for IGBT Power Devices

2008 ◽  
Author(s):  
Clement Sabatier ◽  
Simon Rack ◽  
Herve Beseaucele ◽  
Julien Venturini ◽  
Thomas Y. Hoffmann ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Power Devices

THE EFFECT OF LOCAL LASER ANNEALING ON THE MAGNETIC PROPERTIES OF AMORPHOUS RIBBONS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1325-C8-1326
Author(s):  
P. Sánchez ◽  
M. C. Sánchez ◽  
E. López ◽  
M. García ◽  
C. Aroca
Keyword(s):  
Magnetic Properties ◽  
Laser Annealing ◽  
Amorphous Ribbons

Orientation Control and Properties of PZT Film Crystalized using Laser Annealing System

2016 ◽  
Vol 136 (12) ◽  
pp. 493-498 ◽  
Author(s):  
Junko Kazusa ◽  
Kazuhiro Koga ◽  
Norio Umeyama ◽  
Fumito Imura ◽  
Daiji Noda ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Orientation Control ◽  
Pzt Film

Laser Annealing of Te-Implanted III-V Semiconductors Studied by Mossbauer Spectroscopy

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Van Rossum ◽  
I. Dezsi ◽  
G. Langouche ◽  
J. De Bruyn ◽  
R. Coussement
Keyword(s):  
Mössbauer Spectroscopy ◽  
Laser Annealing ◽  
Mossbauer Spectroscopy ◽  
Quadrupole Split ◽  
Annealing Behaviour ◽  
Mößbauer Spectroscopy ◽  
Annealing Procedure

ABSTRACTThe laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Excimer Laser Annealing ◽  
Boundary Density ◽  
Single Grain

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

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