Low Temperature Plasma Deposition of Silicon Thin Films for Flexible Electronics

2007 ◽  
Author(s):  
P. Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Plasma Deposition ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Silicon Thin Films

Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices

2009 ◽  
Vol 610-613 ◽  
pp. 353-356
Author(s):  
Jin She Yuan ◽  
Ming Yue Wang ◽  
Guo Hao Yu
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Plasma Deposition ◽  
Diamond Like Carbon ◽  
Low Temperature Plasma ◽  
Photovoltaic Devices ◽  
Temperature Plasma ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gan Film

Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.

Low-Temperature Plasma-Processed Microcrystalline Silicon Thin Films for Large-Area Electronics

2001 ◽  
Vol 80-81 ◽  
pp. 361-366 ◽  
Author(s):  
Pere Roca i Cabarrocas ◽  
Surendra Kumar ◽  
V. Tripathi ◽  
P. Bulkin ◽  
R. Brenot ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Low Temperature Plasma ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Temperature Plasma ◽  
Silicon Thin Films ◽  
Large Area Electronics

A Novel Organosilicon Source for Low Temperature Plasma Deposition of Silicon Nitride-like Thin Films

2005 ◽  
Vol 2 (8) ◽  
pp. 612-617 ◽  
Author(s):  
Rosa Di Mundo ◽  
Riccardo d'Agostino ◽  
Francesco Fracassi ◽  
Fabio Palumbo
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Deposition ◽  
Low Temperature Plasma ◽  
Temperature Plasma

Effect of low-temperature plasma treatment and γ-irradiation on the surface properties of thin films based on polylactic acid

2020 ◽  
Vol 6 ◽  
pp. 40-55
Author(s):  
N.M. Ivanova ◽  
◽  
E.O. Filippova ◽  
A.N. Aleinik ◽  
V.F. Pichugin ◽  
...  
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Low Temperature ◽  
Polylactic Acid ◽  
Surface Properties ◽  
Polar Component ◽  
Low Temperature Plasma ◽  
Plasma Exposure ◽  
Γ Irradiation ◽  
Temperature Plasma

Effects of the low-temperature plasma exposure, γ-irradiation, and joint g-irradiation and plasma exposure on the structure and surface properties of thin films based on polylactic acid (PLA) have been investigated. Films were obtained by the method a solvent-casting. It has been shown that films based on polylactic acid have topographically different sides: a smoother inner side and embossed outer one. PLA films have properties close to those hydrophobic, with a contact angle in the range of 70°-73° regardless of the surface side and belong to a weakly polar materials. The combined effect of plasma and gamma radiation slightly changes the surface topography. The effect of low-temperature plasma on the surface of the films leads to a decrease in the contact angle by 13°-55° (9-11%) and an increase in surface energy due to the polar component. The results of in vivo experiments on rabbits are presented. Biomicroscopy, optical coherence tomography, morphological and electron microscopic examination of the cornea after implantation of initial and radiation and plasma treated films showed that implantation of the films in the anterior chamber is not accompanied by a pronounced inflammatory reaction and increased intraocular pressure, while maintaining the morphological structure of the cornea almost unchanged.

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